http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Noise in ZnO nanowire field effect transistors.
Xiong, Hao D,Wang, Wenyong,Suehle, John S,Richter, Curt A,Hong, Woong-Ki,Lee, Takhee American Scientific Publishers 2009 Journal of Nanoscience and Nanotechnology Vol.9 No.2
<P>The noise power spectra in ZnO nanowire field effect transistors (FETs) were experimentally investigated and showed a classical 1/f dependence. A Hooge's constant of 5 x 10(-3) was estimated. This value is within the range reported for CMOS FETs with high-k dielectrics, supporting the concept that nanowires can be utilized for future beyond-CMOS electronic applications from the point of view of device noise properties. ZnO FETs measured in a dry O2 environment displayed elevated noise levels compared to in vacuum. At low temperature, random telegraph signals are observed in the drain current.</P>
구상모,최창용,조원주,김상식,Qiliang Li,John S. Suehle,Curt A. Richter,Eric M. Vogel 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.3
In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional and three-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L and thickness t but varying the channel width W from 5 nm and 5 μm. By evaluating the charge distributions and the current flowlines of both the two- and three-dimensional structures, we have shown that the increase in the `on state' conduction current in the SiNW channel is a dominant factor, which consequently results in more than a two order of magnitude improvement in the on/off current ratio. In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional and three-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L and thickness t but varying the channel width W from 5 nm and 5 μm. By evaluating the charge distributions and the current flowlines of both the two- and three-dimensional structures, we have shown that the increase in the `on state' conduction current in the SiNW channel is a dominant factor, which consequently results in more than a two order of magnitude improvement in the on/off current ratio.