RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      검색결과 좁혀 보기

      선택해제

      오늘 본 자료

      • 오늘 본 자료가 없습니다.
      더보기
      • 무료
      • 기관 내 무료
      • 유료
      • KCI등재

        Design and Analysis of a Parallel Hybrid Memory Architecture for Per-Flow Buffering in High-Speed Switches and Routers

        Ling Zheng,Zhiliang Qiu,Shiyong Sun,Weitao Pan,Ya Gao,Zhiyi Zhang 한국통신학회 2018 Journal of communications and networks Vol.20 No.6

        The network switches and routers require both highspeedand large-capacity packet buffers. However, existing packetbuffer architectures have the problems of speed scaling and flownumber scaling limitations. To address the two problems simultaneously,this paper proposes a parallel hybrid SRAM/DRAMarchitecture for per-flow buffering in high-speed switches androuters. Tail SRAM and head SRAM are used to apply per-flowbuffering for packet aggregation, so that the middle DRAM is accessedin a larger granularity and the DRAM’s bandwidth utilizationis improved. To mitigate the flow number scaling limitation,a dynamic memory allocation with hard timeout (DMA-HT) memorymanagement algorithm is designed. The key idea of DMA-HTis that the memory space is dynamically allocated for the newly arrivedflows, and a hard timeout is assigned for each queue. Aftera specific period of time, the memory space is freed, so that theSRAM space is efficiently utilized by the most recently active flows. A queuing system is used to model the proposed method, and theoreticalanalysis is performed to optimize the timeout value. Withthe derived formulas, multiple performance parameters are quantitativelyanalyzed, and the optimal timeout can be obtained. Bothnumerical results and simulations show that the proposed architecturecan and reduce packet loss rate and average delay significantlycompared with previous solutions with the same SRAM capacity.

      • KCI등재

        A High-Performance Self-Powered UV Photodetector Based on SnO2 Mesoporous Spheres @ TiO2

        Yuewu Huang,Qingjiang Yu,Jinzhong Wang,Xiaochao Li,Yuan Yan,Shiyong Gao,Feifei Shi,Dongbo Wang,Cuiling Yu 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.6

        A novel self-powered UV photodetector (UVPD) based on the photoelectrochemical cell (PECC) has been constructed using the TiO2 coated SnO2 mesoporous spheres (SnO2-MS@TiO2). This self-powered UVPD displays a higher photocurrent density compared to the UVPD with the pure SnO2-MS. By means of external quantum efficiency (EQE), UV-vis absorption, and electrochemical impedance measurements, we scrutinize the intrinsic role of the TiO2 coating layer on the photocurrent enhancement. Under UV irradiation, this UVPD exhibits a high on/off ratio of 11519, a fast rise time of 0.007 s and decay time of 0.006 s, together with the excellent visible-blind characteristic and linear optical signal response. The self-powered photodetector is a promising candidate for application in high-sensitivity and high-speed UVPDs.

      • KCI등재

        Effect of Annealing on Lattice Strain and Near-Band-Edge Emission of ZnO Nanorods

        Musbah Babikier,Jinzhong Wang,Dunbo Wang,Qian Li,Jianming Sun,Yuan Yan,Wenqi Wang,Qingjiang Yu,Shujie Jiao,Shiyong Gao,Hongtao Li 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.4

        The effect of air and oxygen annealing on the structural and the optical properties of hydrothermally synthesized ZnO nanorods was investigated. After hydrothermal synthesis, the resulting ZnO nanorods were annealed in air and under an oxygen atmosphere at 370°C for 1 h. X-ray diffraction results revealed that the oxygen-annealed nanorods possessed high crystallinity with a hexagonal-wurtzite crystal structure in the (002) plane. Evaluation of strain showed a tensile lattice strain of 0.426% resulting from oxygen annealing. The photoluminescence measurements showed that the relative intensity ratio of the near-band-edge emission (NBE) to the green emission (INBE/IGE) increased from ~2.6 for the as-grown ZnO nanorods to ~68.7 when the nanorods were annealed under oxygen. After annealing, a red shift of ~30 and ~44 meV in the NBE was observed for the nanorods that were annealed in air and under oxygen, respectively. This shift is attributed to the interaction between the neutral acceptors and the adsorbed oxygen atoms.

      연관 검색어 추천

      이 검색어로 많이 본 자료

      활용도 높은 자료

      해외이동버튼