http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
A Magnetic Amplifier using Nanocrystalline Soft Magnetic Material
Y. Shindo,T. Yoshihara,M. Otsubo,M. Sawada 전력전자학회 2011 ICPE(ISPE)논문집 Vol.2011 No.5
A Magnetic Amplifier using saturable reactor with nanocrystalline soft magnetic material is presented. A method of obtaining the frequency response is presented. Experimental results show that the method is adequate and practical. Moreover it is shown that the efficiency of the Magnetic Amplifier is comparable to the switching power supply with primary control, despite the existence of additional saturable reactors.
Impact of contact resistance on memory window in phase-change random access memory (PCRAM)
An, J. s.,Choi, C. m.,Shindo, S.,Sutou, Y.,Kwon, Y. w.,Song, Y. h. Springer Science + Business Media 2016 Journal of Computational Electronics Vol.15 No.4
<P>This paper investigates the impact of contact resistance on the memory window in phase-change random access memories (PCRAMs) using (GST). We discuss the increase of contact resistance, as device is scaled down to a nanometer size and the effects of contact resistivity changes with respect to the resistance window between the set and reset states. In a contact area of , the contact resistance in the set state occupies more than 80 % of the total resistance, and the occupied area increases as the contact area is scaled upward. The memory window is significantly degraded as the set resistance increases because of the increasing contact resistance. To maintain the memory window with more than two orders of magnitude of the resistance in a area, the contact resistance should be decreased to less than 60 % of that of a area by reducing contact resistivity or by some other method. We examine the reduction of contact resistance achieved by adopting a three-dimensional contact structure, and we propose this structure as a candidate for the scaled PCRAM.</P>
An, J.S.,Choi, C.M.,Shindo, Y.,Sutou, Y.,Jeong, H.S.,Song, Y.H. IET 2016 Electronics letters Vol.52 No.18
<P>The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge1Cu2Te3 is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude.</P>