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Effect of hydrogen on mechanical stability of amorphous In–Sn–O thin films for flexible electronics
Kim, Seohan,Yoon, Jang-hee,Bang, Joonho,Song, Pungkeun Elsevier 2019 THIN SOLID FILMS - Vol.669 No.-
<P><B>Abstract</B></P> <P>Hydrogen-incorporated amorphous In–Sn–O (a-ITO) thin films were fabricated by introducing hydrogen gas during deposition. The hydrogen concentration in the thin films was experimentally determined to vary from 4.7 × 10<SUP>20</SUP> to 8.1 × 10<SUP>20</SUP> cm<SUP>−3</SUP> with increasing H<SUB>2</SUB> flow rate. The mechanical stability of the a-ITO thin films dramatically improved with the optimal amount of hydrogen (~5.3× 10<SUP>20</SUP> cm<SUP>−3</SUP>), without any observable degradation in electrical or optical properties. With increasing hydrogen concentration to the optimal value, the compressive residual stress gradually decreased and the subgap absorption at ~3.1 eV was suppressed. Considering that the residual stress and subgap absorption mainly originate from defects, hydrogen may be a promising candidate for defect passivation in flexible electronics.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Hydrogen-incorporated amorphous In−Sn − O thin films were fabricated. </LI> <LI> Bending stability of films dramatically improved by hydrogen incorporation. </LI> <LI> Subgap states was suppressed by optimal amount of hydrogen. </LI> </UL> </P>
Byeon, Jayoung,Kim, Seohan,Lim, Jae-Hong,Song, Jae Yong,Park, Sun Hwa,Song, Pungkeun Institute of Pure and Applied Physics 2017 Japanese Journal of Applied Physics Vol.56 No.1
<P>To realize high thermoelectric performance, it was tried to control both high electrical conductivity (sigma) and low thermal conductivity (K) for the Sn-doped indium-zinc oxide films prepared by DC magnetron sputtering. The highest power factor was obtained post-annealed at 200 degrees C due to the highest s. However, the highest figure of merit was obtained annealed at 500 degrees C. It could be attributed to both amorphous structure with low K by phonon and the highest Hall mobility. Thermoelectric and electrical properties of the film could be controlled by both heat treatment and Sn doping with high bond enthalpy. (C) 2017 The Japan Society of Applied Physics</P>
Zhao, Pin,Kim, Seohan,Yoon, Seonghwan,Song, Pungkeun Elsevier 2018 THIN SOLID FILMS - Vol.665 No.-
<P><B>Abstract</B></P> <P>Indium zinc oxide/silver/indium zinc oxide multilayer structures with a very low resistivity and high transmittance were deposited on a polyethylene terephthalate substrate by DC magnetron sputtering. The electrical, optical, mechanical, and thermal properties of the multilayer films were investigated at different Ag layer thicknesses (10–20 nm). The multilayers demonstrated relatively constant resistance change (<I>∆R</I>/ <I>R</I> <SUB>0</SUB>) over repeated bending tests with a radius of 8 mm. Efficient Joule heating could increase the operating temperature of the film heaters (7.3 Ω/□) to 73.7 °C in ~20 s at 3 V; moreover, the heat distribution remained uniform after bending tests. A high transmittance (84.7%) at a wavelength of 550 nm and low sheet resistance (7.3 Ω/□) of the optimized multilayer was obtained at an Ag layer thickness of 15 nm. These results indicate that the multilayers are promising as transparent film heaters for next-generation flexible applications.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Indium Zinc Oxide (IZO)/Ag/IZO multilayer used in flexible Thin Film Heaters (TFHs). </LI> <LI> Uniform heat distribution of the heater before and after bending test. </LI> <LI> IZO/Ag/IZO multilayer with 15-nm Ag layer was demonstrated to be the best combination. </LI> </UL> </P>