http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Reduction of conductivity and ferromagnetism induced by Ag doping in ZnO:Co
Bieber, H.,Colis, S.,Schmerber, G.,Pierron-Bohnes, V.,Boukhvalov, D.W.,Kurmaev, E.Z.,Finkelstein, L.D.,Bazylewski, P.,Moewes, A.,Chang, G.S.,Dinia, A. Elsevier 2013 THIN SOLID FILMS - Vol.545 No.-
<P><B>Abstract</B></P> <P>Cobalt and silver co-doping has been undertaken in ZnO thin films grown by pulsed laser deposition in order to investigate the ferromagnetic properties in ZnO-based diluted magnetic materials and to understand the eventual relation between ferromagnetism and charge carriers. Hall transport measurements reveal that Ag doping up to 5% leads to a progressive compensation of the native <I>n</I>-type carriers. The magnetization curves show ferromagnetic contributions for all samples at both 5K and room temperature, decreasing with increasing the Ag concentration. First principles modeling of the possible configurations of Co–Ag defects suggests the formation of nano-clusters around interstitial Co impurity as the origin of the ferromagnetism. The Ag co-doping results in a decrease of the total spin of these clusters and of the Curie temperature.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We fabricate ZnO:Co films co-doped by Ag. </LI> <LI> Reduction of the number of charge carriers in co-doped samples is observed. </LI> <LI> Decrease of magnetic moment per Co in Ag-rich samples is observed. </LI> <LI> Theoretical calculations support suppression of ferromagnetism in Ag-doped ZnO:Co. </LI> </UL> </P>
Nd-Doped SnO<sub>2</sub> and ZnO for Application in Cu(InGa)Se<sub>2</sub> Solar Cells
Park, Hyeonwook,Alhammadi, Salh,Bouras, Karima,Schmerber, Guy,Ferblantier, Gé,rald,Dinia, Aziz,Slaoui, Abdelilah,Jeon, Chan-Wook,Park, Chinho,Kim, Woo Kyoung American Scientific Publishers 2017 Science Of Advanced Materials Vol.9 No.12
H. Sefardjella,B. Boudjema,A. Kabir,G. Schmerber 한국물리학회 2013 Current Applied Physics Vol.13 No.9
Tin oxide films have been prepared by oxidation of Sn thin films deposited by thermal evaporationmethod onto glass substrates. The oxidation of films was done, in air at a temperature of 500 ℃, from 20to 120 min. The oxidized films were characterized by X-ray diffraction (XRD), Rutherford backscatteringspectroscopy (RBS), photoluminescence spectroscopy (PL) and surface profilometer. The XRD patternsshow that the crystalline structure of the oxidized Sn films improves with the annealing time. Thetetragonal SnO2 phase (cassiterite) was obtained after 120 min of annealing with grains sizes between 15and 20 nm. The thickness of oxide films, as function of the annealing time, follows a parabolic law. The O/Sn atomic ratio increases with the annealing time indicating an improvement of the films quality. Tininterstitials defects density, calculated from PL spectra using Smakula’s formula, was found to decreasewith the increasing annealing time. Tin interstitials defects density was found proportional to theincreasing oxygen density (deduced from RBS). A fit of this proportionality allowed us to quantify the tincations and oxygen anions diffused through the oxide films.
F. Z. Gadouche,A. Kabir,C. Sedrati,A. Bouabellou,G. Schmerber 한국전기전자재료학회 2024 Transactions on Electrical and Electronic Material Vol.25 No.2
The effect of the substitution of barium by calcium on structural, optical and luminescence properties of spray deposited barium tin oxide fi lms was studied in this work, as a function of the calcium-based solution volume ratio R Ca . According to X-ray diffraction (XRD) patterns, the substitution of barium by calcium induced an indirect phase transition from Ba3 SnO to Ca3 SnO. The Ba3 Sn2O7 metastable phase was identifi ed for R Ca = 0.3. The effect of the substitution of barium by calcium on optical properties was examined by UV–visible spectroscopy. As a function of R Ca , the mean transmittance, in the visible domain, increased from 50 to 80% while the band gap energy decreased from 3.14 to 3.09 eV. PL spectra revealed that the substitution of barium by calcium increases the concentration of double ionized oxygen vacancies (V O ++ ). The semiconducting behavior and the presence of defects made the deposited fi lms promising materials for optoelectronics, gas sensing and photovoltaic conversion devices.