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Theoretical and Experimental Analysis of Back-Gated SOI MOSFETs and Back-Floating NVRAMs
Avci, Uygar,Kumar, Arvind,Tiwari, Sandip The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.1
Back-gated silicon-on-insulator MOSFET -a threshold-voltage adjustable device-employs a constant back-gate potential to terminate source-drain electric fields and to provide carrier confinement in the channel. This suppresses shortchannel effects of nano-scale and of high drain biases, while allowing a means to threshold voltage control. We report here a theoretical analysis of this geometry to identify its natural length scales, and correlate the theoretical results with experimental device measurements. We also analyze experimental electrical characteristics for misaligned back-gate geometries to evaluate the influence on transport behavior from the device electrostatics due to the structure and position of the back-gate. The backgate structure also operates as a floating-gate nonvolatile memory (NVRAM) when the back-gate is floating. We summarize experimental and theoretical results that show the nano-scale scaling advantages of this structure over the traditional front floating-gate NVRAM.
A Single Element Phase Change Memory
LEE, Sang-Hyeon,KIM, Moonkyung,CHEONG, Byung-ki,KIM, Jooyeon,LEE, Jo-Won,TIWARI, Sandip The Institute of Electronics, Information and Comm 2011 IEICE transactions on electronics Vol.94e.c No.5
<P>We report a fast single element nonvolatile memory that employs amorphous to crystalline phase change. Temperature change is induced within a single electronic element in confined geometry transistors to cause the phase change. This novel phase change memory (PCM) operates without the need for charge transport through insulator films for charge storage in a floating gate. GeSbTe (GST) was employed to the phase change material undergoing transition below 200°C. The phase change, causing conductivity and permittivity change of the film, results in the threshold voltage shift observed in transistors and capacitors.</P>