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N.B. Pawar,S.S. Mali,S.D. Kharade,M.G. Gang,P.S. Patil,김진혁,C.K. Hong,P.N. Bhosale 한국물리학회 2014 Current Applied Physics Vol.14 No.3
In the present paper we report structural, optical, morphological and electrical properties of thin films of MoBi2S5 prepared by facile self organized arrested precipitation technique (APT) from aqueous alkaline bath. X-ray diffraction study on thin films suggests orthorhombic and rhombohedral mixed phase structure. The samples are further annealed under vacuum at 373 and 473 K. The EDS pattern shows minor loss of sulphur upto 473 K. The optical absorption in visible region shows direct allowed transition with band gap variation over 1.2e1.1 eV. Post-heat treated samples exhibit n-type electrical conductivity. SEM images show uniform distribution of spherical grains with diameter w200 nm for as-synthesized MoBi2S5 thin film. The grain size increases with annealing temperature and morphology becomes more compact due to crystallization of thin film. The surface roughness deduced from AFM, was in the range of 1.29e1.92 nm. The MoBi2S5 thin films are employed for the fabrication of photoelectrochemical solar cells as all the samples exhibit strong absorption in visible to near IR region. Due to vacuum annealing it gives a significant enhancement of power conversion efficiency (h) upto 0.14% as compared to as-synthesized MoBi2S5 thin film.
Pawar, N.B.,Mali, S.S.,Kharade, S.D.,Gang, M.G.,Patil, P.S.,Kim, J.H.,Hong, C.K.,Bhosale, P.N. Elsevier 2014 Current Applied Physics Vol.14 No.3
In the present paper we report structural, optical, morphological and electrical properties of thin films of MoBi<SUB>2</SUB>S<SUB>5</SUB> prepared by facile self organized arrested precipitation technique (APT) from aqueous alkaline bath. X-ray diffraction study on thin films suggests orthorhombic and rhombohedral mixed phase structure. The samples are further annealed under vacuum at 373 and 473 K. The EDS pattern shows minor loss of sulphur upto 473 K. The optical absorption in visible region shows direct allowed transition with band gap variation over 1.2-1.1 eV. Post-heat treated samples exhibit n-type electrical conductivity. SEM images show uniform distribution of spherical grains with diameter ~200 nm for as-synthesized MoBi<SUB>2</SUB>S<SUB>5</SUB> thin film. The grain size increases with annealing temperature and morphology becomes more compact due to crystallization of thin film. The surface roughness deduced from AFM, was in the range of 1.29-1.92 nm. The MoBi<SUB>2</SUB>S<SUB>5</SUB> thin films are employed for the fabrication of photoelectrochemical solar cells as all the samples exhibit strong absorption in visible to near IR region. Due to vacuum annealing it gives a significant enhancement of power conversion efficiency (η) upto 0.14% as compared to as-synthesized MoBi<SUB>2</SUB>S<SUB>5</SUB> thin film.
Performance Evolution of SC-FDMA for Mobile Communication System
S. B. Lande,Jyoti D. Gawali,S. M. Kharad 보안공학연구지원센터 2016 International Journal of Future Generation Communi Vol.9 No.2
The main aim of this work is to investigate the performance of Single Carrier Frequency Division Multiple Access (SC-FDMA) in mobile communication system. Nowadays there is increase in demand for high speed data transfer in mobile communication. Different multiple access schemes like Orthogonal Frequency Division Multiplexing (OFDM) and SC-FDM are the two important schemes of Long Term Evolution (LTE) for next generation communication. In this paper, we observe the evolution of SC-FDMA in LTE by showing bit error rate variation and PAPR ratio comparison between OFDMA system and SC-OFDMA system.