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T. Minegishi,Z. Vashaei,G. Fujimoto,H. Suzuki,K. Sumitani,M. Cho,M. Suemitsu,O. Sakata,S. Tokairin,T. Yao,Y. Narita 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
We studied ZnO growth on 3C-SiC(001)/Si(001) templates. In-situ reflection high- energy electron diffraction (RHEED) observations implied that ZnO grown on 3C-SiC(001) had a critical thickness (50 nm). From a structural characterization by using X-ray diffraction, we revealed that ZnO films thinner than the critical thickness grown on 3C-SiC(001) had a [10-11] orientation with 4-fold in-plane symmetry. On the other hand, ZnO films thicker than the critical thickness consisted of [10-11] and [0001] orientations. Also, the portion of [0001] oriented ZnO increased with the layer thickness. Possible interface configurations of ZnO(10-11)/3C-SiC(001) and ZnO(0001)/ZnO(10-11) are suggested.