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Zinc Chloride Modified Electronic Transport and Relaxation Studies in Barium-Tellurite Glasses
Sunil Dhankhar,R. S. Kundu,Sunita Rani,Preeti Sharma,S. Murugavel,Rajesh Punia,N. Kishore 대한금속·재료학회 2017 ELECTRONIC MATERIALS LETTERS Vol.13 No.5
The ac conductivity of halide based tellurium glasses havingcomposition 70 TeO2-(30-x) BaO-x ZnCl2 ; x = 5, 10, 15 , 20 and 25has been investigated in the frequency range 10-1 Hz to 105Hz and inthe temperature range 453 K to 553 K. The frequency and temperaturedependent ac conductivity show mixed behaviour with increase inhalide content and found to obey Jonscher’s universal power law. Thevalues of dc conductivity, crossover frequency and frequency exponenthave been estimated from the fitting of experimental data of acconductivity with Jonscher’s universal power law. For determining theconduction mechanism in studied glass system, frequency exponent hasbeen analyzed by various theoretical models. In presently studiedglasses, the ac conduction takes place via overlapping large polarontunneling (OLPT). The values of activation energy for dc conduction(W) and the one associated with relaxation process (ER) are found toincrease with increase in x up to glass sample with x = 15 and thereafterit decrease with increase in zinc chloride content. DC conduction takes place via variable range hopping (VRH) as proposed byMott with some modification suggested by Punia et al. The value of real part of modulus (M') is observed to decrease withincrease in temperature. The value of stretched exponent (β) obtained from fitting of M'' reveals the presence of non-Debye typeof relaxation in presently studied glass samples. Scaling spectra of ac conductivity and values of electric modulus (M' and M'')collapse into a single master curve for all the compositions and temperatures. The values of relaxation energy (ER) for all thestudied glass compositions are almost equal to W, suggesting that polarons have to overcome same barrier while relaxing andconducting. The conduction and relaxation processes in the studied glass samples are composition and temperature independent.
Epitaxial Stabilization of a New Multiferroic Hexagonal Phase of TbMnO<sub>3</sub> Thin Films
Lee, J.-H.,Murugavel, P.,Ryu, H.,Lee, D.,Jo, J. Y.,Kim, J. W.,Kim, H. J.,Kim, K. H.,Jo, Y.,Jung, M.-H.,Oh, Y. H.,Kim, Y.-W.,Yoon, J.-G.,Chung, J.-S.,Noh, T. W. WILEY-VCH Verlag 2006 Advanced Materials Vol.18 No.23
<B>Graphic Abstract</B> <P>Multiferroic hexagonal TbMnO<SUB>3</SUB> thin films have been epitaxially stabilized on substrates with hexagonal in-plane symmetry by pulsed laser deposition. The hexagonal TbMnO<SUB>3</SUB> films show ferroelectricity below ca. 60 K with a remnant polarization 20 times larger compared to its orthorhombic bulk phase. In addition, these samples show an electric-field-induced antiferroelectric-to-ferroelectric phase transition. <img src='wiley_img/09359648-2006-18-23-ADMA200601621-content.gif' alt='wiley_img/09359648-2006-18-23-ADMA200601621-content'> </P>