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Identification and Characterization of a Novel Antibacterial Peptide, Avian β-Defensin 2 from Ducks
Deying Ma,Ruiqin Wang,Wenyan Liao,Zongxi Han,Shengwang Liu 한국미생물학회 2009 The journal of microbiology Vol.47 No.5
In this study, a novel avian β-defensin (AvBD) was isolated from duck pancreas. The complete nucleotide sequence of the gene contained an 195 bp open reading frame encoding 64 amino acids. Homology, characterization and comparison of the gene with AvBD from other avian species confirmed that it was duck AvBD2. The mRNA expression of the gene was analyzed in 17 tissues from 21-day-old ducks. AvBD2 was highly expressed in the trachea, crop, heart, bone marrow, and pancreas; moderately expressed in the muscular stomach, small intestine, kidney, spleen, thymus, and bursa of Fabricius; and weakly expressed in skin. We produced and purified recombinant AvBD2 by expressing the gene in Escherichia coli. As expected, the recombinant peptide exhibited strong bactericidal properties against Bacillus cereus, Staphylococcus aureus, and Pasteurella multocida, and weak bactericidal properties against E. coli and Salmonella choleraesuis. In addition, the recombinant protein retained antimicrobial activity against S. aureus under different temperatures (range, -20°C to 100°C) and pH values (range, 3 to 12).
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Performance improvement of amorphous indium-gallium-zinc oxide ReRAM with SiO2 inserting layer
Yanli Pei,Biaoren Mai,Xiaoke Zhang,Ruiqin Hu,Ya Li,Zimin Chen,Bingfeng Fan,Jun Liang,Gang Wang 한국물리학회 2015 Current Applied Physics Vol.15 No.4
In this study, the resistive switching performance of amorphous indiumegalliumezinc oxide (a-IGZO) resistive switching random-access memory (ReRAM) was improved by inserting a thin silicon oxide layer between silver (Ag) top electrode and a-IGZO resistive switching layer. Compared with the single a-IGZO layer structure, the SiO2/a-IGZO bi-layer structure exhibits the higher On/Off resistance ratio larger than 103, and the lower operation power using a smaller SET compliance current. In addition, good endurance and excellent retention characteristics were achieved. Furthermore, multilevel resistance states are obtained through adjusting SET compliance current and RESET stop voltage, which shows a promise for high-performance nonvolatile multilevel memory application.
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