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RISS 인기검색어
- 검색키워드
- 저자 : Rakesh Kumar Ranjan (검색결과 3 건)
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Rakesh Sharma,Arpan Choudhary,Ranjit Kumar Das,Supriya Basu,Ranjan Kumar Dey,Rupesh Gupta,Partha Pratim Deb 대한비뇨의학회 2017 Investigative and Clinical Urology Vol.58 No.2
Purpose: Extracorporeal shock wave lithotripsy (ESWL) is an established modality for renal calculi. Its role for large stones is being questioned. A novel model of temporary double J (DJ) stenting followed by ESWL was devised and outcomes were assessed. Materials and Methods: The study included 95 patients with renal calculi sized 1 to 2 cm. Patients were randomized into 3 groups. Group 1 received ESWL only, whereas group 2 underwent stenting followed by ESWL. In group 3, a distinct model was applied in which the stent was kept for 1 week and then removed, followed by ESWL. Procedural details, analgesic requirements, and outcome were analyzed. Results: Eighty-eight patients (male, 47; female, 41) were available for analysis. The patients' mean age was 37.9±10.9 years. Stone profile was similar among groups. Group 3 received fewer shocks (mean, 3,155) than did group 1 (mean, 3,859; p=0.05) or group 2 (mean, 3,872; p=0.04). The fragmentation rate was similar in group 3 (96.7%) and groups 1 (81.5%, p=0.12) and 2 (87.1%, p=0.16). Overall clearance in group 3 was significantly improved (83.3%) compared with that in groups 1 (63.0%, p=0.02) and 2 (64.5%, p=0.02) and was maintained even in lower pole stones. The percentage successful outcome in groups 1, 2, and 3 was 66.7%, 64.5%, and 83.3%, respectively (p=0.21). The analgesic requirement in group 2 was higher than in the other groups (p=0.00). Group 2 patients also had more grade IIIa (2/3) and IIIB (1/2) complications. Conclusions: Stenting adversely affects stone clearance and also makes the later course uncomfortable. Our model of brief stenting followed by ESWL provided better clearance, comfort, and a modest improvement in outcome with fewer sittings and steinstrasse in selected patients with large renal calculi.
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Khushboo Sharma,Rakesh Kumar Ranjan,Sargam Lohar,Jayant Sharma,Rajeev Rajak,Aparna Gupta,Amit Prakash,Alok Kumar Pandey 한국대기환경학회 2022 Asian Journal of Atmospheric Environment (AJAE) Vol.16 No.1
This study analyzed the BC associated with PM1 and the contribution of biomass burning to the BC using a portable seven-channel Dual spot Aethalometer in and around Gangtok, the capital city of Sikkim, India, during April 2021. Additionally, CO2 and meteorological parameters (Temperature, Pressure, and Relative Humidity) was measured. The minimum concentration of BC was found in rural areas where the contribution of biomass burning to the BC is highest. The observed spatial variability of BC over Gangtok Municipal Corporation (GMC) area is minimal. Five days back-trajectory analysis was done using the Hybrid Single Particle Lagrangian Integrated Trajectory (HYSPLIT) model to understand the regional influences of air masses at Gangtok. The air mass of the studied region is under influence of trans-regional transport from Indo-Gangetic Plains affecting the BC concentration over the studied region. The black carbon presence in the ambient air near the glacier heights in the Eastern Himalayan region may significantly cause localized warming, thereby enhancing glacier melts. The results have significant bearing for the policy-makers to take corrective steps in addressing the issue of rising BC concentration in high altitude regions. A further detailed study is needed to examine the effect of BC on radiative forcing and its large-scale effect on the East Asian summer monsoon using regional climate models.
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Performance Analysis of Normally-on Dual Gate Algan/Gan Hemt
Manisha Rao,Ravi Ranjan,Nitesh Kashyap,Rakesh Kumar Sarin 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.5
This paper presents the novel normally-on dual gate (DG) AlGaN/GaN high electron mobility transistor. At high frequency, the dual gate structure gives superlative immunity over short channel eff ects. Multiple 2DEG channel regions in dual gate AlGaN/GaN HEMT improves the transport characteristics, charge control and gives better linearity. The high carrier mobility and electron saturation velocity contribute to the high switching frequency of DG HEMT. The drain characteristics of single gate HEMT and dual gate HEMT are compared and DG HEMT outstands in drain current. The various analog and linearity parameters are investigated for DG HEMT. The performance analysis provides better transconductance, capacitance, cut off frequency, subthreshold slope and on-resistance simulations represents the potential of DG HEMT. The DG HEMT provides 1100 mA/mm I ON , 550 mS/mm transconductance and 11 GHz cutoff frequency at V gs = 2 V. The high drain current, better transconductance and cutoff frequency results in better sensitivity of device.
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