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Electromagnetic propagation in nanostructures
Michael A. Mastro,Charles R. Eddy Jr.,김지현,R. T. Holm 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.1
Future integrated circuit technology will feature a fusion of optical and optoelectronic components with traditional electronic devices. Information can be rapidly transmitted as light in dielectric waveguides, photonic crystal guides and metallic nanoarrays. This paper presents a description of electromagnetic propagation in semiconductor and metallic nanostructures. Diffraction effects will dominate the propagation of light when the dimension of the cavity or device approaches its wavelength. The plasmonic effect circumvents this problem by propagating the light wave through highly localized conduction electrons in a noble metal [1]. Future integrated circuit technology will feature a fusion of optical and optoelectronic components with traditional electronic devices. Information can be rapidly transmitted as light in dielectric waveguides, photonic crystal guides and metallic nanoarrays. This paper presents a description of electromagnetic propagation in semiconductor and metallic nanostructures. Diffraction effects will dominate the propagation of light when the dimension of the cavity or device approaches its wavelength. The plasmonic effect circumvents this problem by propagating the light wave through highly localized conduction electrons in a noble metal [1].
Laser ablation of via holes in GaN and AlGaN∕GaN high electron mobility transistor structures
Anderson, Travis,Ren, Fan,Pearton, Stephen J.,Mastro, Michael A.,Holm, Ron T.,Henry, Rich L.,Eddy, Charles R.,Lee, Joon Yeob,Lee, Kwan-Young,Kim, Jihyun American Vacuum Society 2006 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B - Vol.24 No.5
Plasmonically enhanced emission from a group-III nitride nanowire emitter
Mastro, Michael A,Freitas Jr, Jaime A,Glembocki, Orest,Eddy Jr, Charles R,Holm, R T,Henry, Rich L,Caldwell, Josh,Rendell, Ronald W,Kub, Fritz,Kim, J IOP Pub 2007 Nanotechnology Vol.18 No.26
<P>The plasmonic response from a nanotextured silver coating was utilized to enhance the transfer of ultraviolet light generated in a group-III nitride nanowire emitter. A two-step approach was developed in a metal–organic chemical vapour deposition system to grow nanowires initially vertically by the vapour–liquid–solid mechanism and, subsequently, laterally by increasing the growth temperature and the group-V/III reactant ratio. This controllably produced a 20 nm GaN:Si core with a 200 nm outer-diameter AlGaN:Mg sheath structure. Solvothermal chemistry based on an ethylene glycol solvent was employed to deposit a silver coating that approximated a dense packing of metallic nanospheres. Nanoscale emission and plasmonically enhanced transfer of this energy were simulated to aid the development and understanding of this system.</P>
Group III-nitride radial heterojunction nanowire light emitters
Michael A. Mastro,Josh Caldwell,Mark Twigg,Blake Simpkins,Orest Glembocki,Ron T. Holm,Charles R. Eddy, Jr.,Fritz Kub,김홍렬,Jaehui Ahn,김지현 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.6
Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.
Evolution of strain throughout gallium nitride deposited on silicon carbide
김지현,M.A. Mastro,N.D. Bassim,J.A. Freitas Jr.,M.E. Twigg,C.R. Eddy Jr.,D.K. Gaskill,R.L. Henry,R.T. Holm,P.G. Neudeck,A.J. Trunek,J.A. Powell 한양대학교 세라믹연구소 2007 Journal of Ceramic Processing Research Vol.8 No.5
During GaN growth on an on-axis SiC substrate, a large density of dislocations (~109 cm−2) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.
Observation of Reverse Saturable Absorption of an X-ray Laser
Cho, B. I.,Cho, M. S.,Kim, M.,Chung, H.-K.,Barbrel, B.,Engelhorn, K.,Burian, T.,Chalupský,, J.,Ciricosta, O.,Dakovski, G. L.,Há,jková,, V.,Holmes, M.,Juha, L.,Krzywinski, J.,Lee, R. American Physical Society 2017 Physical Review Letters Vol.119 No.7