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Electroluminescence of n-Zn1-xMgxO/ZnO/p-Zn1-xMgxO Heterostructures Grown on Si Substrates
Sh. U. Yuldashev,T. W. Kang,R. A. Nusretov,I. V. Khvan,P. K. Khabibullaev,Y. K. Yeo,R. L. Hengehold 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
The n-Zn0.9Mg0.1O/ZnO/p-Zn0.9Mg0.1O heterojunction structures were grown on single-crystal p-type Si (100) substrates by using a simple process of ultrasonic spray pyrolysis. Aqueous solutions of zinc acetate, magnesium acetate, and ammonium acetate were used as the sources of Zn, Mg, and N, respectively. P-type conductivity was observed for the nitrogen-doped ZnO and Zn0.9Mg0.1O films. A distinct visible electroluminescence was observed at room temperature from the n-Zn0.9Mg0.1O/ZnO/p-Zn0.9Mg0.1O heterojunction structures under forward bias conditions.