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Dutta, Pranabesh,Yang, Wooseung,Eom, Seung Hun,Lee, Woo-Hyung,Kang, In Nam,Lee, Soo-Hyoung The Royal Society of Chemistry 2012 Chemical communications Vol.48 No.4
<p>Two new small molecules with a rigid planar naphtho[1,2-<I>b</I>:5,6-<I>b</I>′]dithiophene (NDT) unit were designed and synthesized. Solution processed bulk-hetereojunction organic solar cells based on blends of the small molecules and [6,6]-phenyl-C<SUB>71</SUB>-butyric acid methyl ester (PC<SUB>71</SUB>BM) exhibited promising photovoltaic device performance with a maximum power conversion efficiency up to 2.20% under the illumination of AM 1.5G, 100 mW cm<SUP>−2</SUP>.</p> <P>Graphic Abstract</P><P>A new rigidly fused building block naphtho[1,2-<I>b</I>:5,6-<I>b</I>′]dithiophene has been employed for the first time to develop novel conjugated small molecules for OSCs. <img src='http://pubs.rsc.org/ej/CC/2011/c1cc15465f/c1cc15465f-ga.gif'> </P>
Dutta, Pranabesh,Kim, Jeongseok,Eom, Seung Hun,Lee, Woo-Hyung,Kang, In Nam,Lee, Soo-Hyoung American Chemical Society 2012 ACS APPLIED MATERIALS & INTERFACES Vol.4 No.12
<P>A new donor–acceptor-conjugated organic small molecule, <B>BDT(TBT)</B><SUB><B>2</B></SUB>, comprised of benzo[1,2-<I>b</I>:4,5-<I>b</I>′]dithiophene and 2,1,3-benzothiadiazole units was designed and synthesized. The small molecule <B>BDT(TBT)</B><SUB><B>2</B></SUB> in its thin film showed an absorption band in the range of 300–700 nm with an absorption edge at 650 nm and an optical band gap of 1.90 eV. As estimated from the cyclic voltammetry measurements, the HOMO and LUMO energy levels of <B>BDT(TBT)</B><SUB><B>2</B></SUB> were −5.44 and −3.37 eV, respectively. The spin-coated thin film of <B>BDT(TBT)</B><SUB><B>2</B></SUB> exhibited p-channel output characteristics with a hole mobility of 2.7 × 10<SUP>–6</SUP>. <B>BDT(TBT)</B><SUB><B>2</B></SUB>, when explored as an electron-donor material in solution-processed bulk-heterojunction organic solar cells in conjunction with a PC<SUB>71</SUB>BM acceptor with an active layer thickness of 50–55 nm, generated a power conversion efficiency (PCE) of 1.18%. A more impressive PCE of ∼2.9% with a short-circuit current density (<I>J</I><SUB>sc</SUB>) of 7.94 mA cm<SUP>–2</SUP> and an open-circuit voltage (<I>V</I><SUB>oc</SUB>) of 0.89 V was achieved when the active layer of the cell was annealed at higher temperature (∼180 °C).</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2012/aamick.2012.4.issue-12/am301841p/production/images/medium/am-2012-01841p_0008.gif'></P>