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Investigation of Magnetic Anisotropy in Ultra-thin Co Films Grown on 2-D Materials
Pham Trang Huyen Cao,Nguyen Dan Chi,Thi-Nga Do,Soo Min Kim,Chanyong Hwang,Tae Hee Kim 한국자기학회 2021 한국자기학회 학술연구발표회 논문개요집 Vol.31 No.2
2D materials have unique physical and chemical properties which can be used for spintronic device applications, such as the long spin relaxation time of graphene. Additionally, the related heterostructures provide the unprecedented probability of combining the different characteristics via the proximity effect. In this work, ultra-thin Co films were grown on CVD-grown Gr and h-BN layers using the UHV-MBE system. In order to characterize unconventional magnetic properties of 6 ~ 8 nm thick Co films, anisotropy of magnetic tunnel junctions (MTJs) was investigated. The MTJs of x-nm Co (x = 6 and 8)\1.6-nm MgO\12-nm Co were prepared using UHV-MBE system on CVD-grown Gr and h-BN. Perpendicular magnetic anisotropy (PMA) was clearly shown at room temperature (RT) in all the Co bottom electrodes prepared on both graphene and h-BN. Interestingly, for the MTJs grown on h-BN, a very large MR value of more than 700%, was observed with the large PMA, while a few tenth percent of MR values were measured for the Co films grown on Gr layers. Considering theoretical report of an active role of the Co/graphene interface in the magnetism of Co, which allows us to sustain PMA, analysis of interface properties between Co and 2-D materials layers is a prerequisite for understanding their magnetic properties. The development of high-quality ferromagnetic thin films in contact with 2D materials is a state-of-the-art growth technique, whereas only thick polycrystalline or three-dimensional morphologies have been demonstrated so far. We report on the growth of flat, epitaxial ultrathin Co films on h-BN and graphene using UHV-MBE deposition technique.