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RISS 인기검색어
- 검색키워드
- 저자 : P. Matheswaran (검색결과 4 건)
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Kumar, R. Saravana,Sathyamoorthy, R.,Sudhagar, P.,Matheswaran, P.,Hrudhya, C.P.,Kang, Yong Soo Elsevier 2011 Physica E, Low-dimensional systems & nanostructure Vol.43 No.6
<P><B>Abstract</B></P><P>The critical role that dopants play in semiconductor devices has stimulated research on the properties and the potential applications of semiconductor nanocrystals. Hence the investigation of the role of dopant concentration on the properties of semiconductor nanoparticles is very important from the viewpoints of basic physics as well as applications. In this context, in the present work Al-doped ZnO (AZO) nanoparticles were synthesized by simple wet chemical route. The structure and morphology of the nanoparticles analyzed using X-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed hexagonal wurtzite structure with flower-like clusters consisting of multi-nanorods. Energy Dispersive Spectrum (EDS) confirms the substitution of Al into ZnO lattice. Defect analysis and excitonic effect of the nanoparticles were investigated by photoluminescence (PL) and UV–Vis absorption measurements, respectively. Optical absorption showed band gap broadening due to quantum confinement effect. PL measurements exhibited both near band edge (NBE) and deep level (DL) emissions. The effect of doping concentration on the growth, crystallization and defect distribution of AZO nanoparticles was studied.</P> <P><B>Research highlights</B></P><P>► Al-doped ZnO nanoparticles were synthesized by facile wet chemical approach. ► Influence of Al doping on the physical properties of ZnO nanoparticles was investigated. ► Crystallinity of the ZnO nanoparticles deteriorated with Al incorporation. ► Broadening of the band gap due to quantum confinement effect was observed upon Al doping. ► Al doping causes annihilation of defect emission and enhancement of UV emission in ZnO.</P>
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Evidence for Phase Change Memory Behavior in In2(SexTe1-x)3 Thin Films
P. Matheswaran,R. Sathyamoorthy,K. Asokan 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.4
Crystalline In2(Se0.5Te0.5)3 thin films are prepared by thermal evaporation and subsequently annealed at 300°C in Ar atmosphere. SEM image of the crystalline sample shows spherical nature of constituents, distributed uniformly throughout the surface. Island structure of the surface is clearly visible after switching. Elemental composition of the sample remains unchanged even after switching. Temperature dependent I-V analysis shows stoichiometric phase change at 80°C [from In2(Se0.5Te0.5)3 to In2Te3 and In2Se3 phase], where current switches three orders of magnitude higher than that in lower temperature. Further rise in temperature results increase in current only after switching, where threshold voltage remains constant.
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Schottky Nature of InSe/Cu Thin Film Diode Prepared by Sequential Thermal Evaporation
P. Matheswaran,R. Sathyamoorthy,K. Asokan 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.6
Highly oriented indium selenide (InSe) thin films were prepared by sequential thermal evaporation on tungsten (W) substrate and subsequently annealed at 300°C for 30 min in argon (Ar) atmosphere. The films were characterized by Glancing Incidence x-ray diffraction (GI-XRD), scanning electron microscopy (SEM), Energy dispersive x-ray analysis (EDX), Diffused reflectance spectroscopy (DRS) and current-voltage (I-V) measurements. Highly crystalline InSe thin film was obtained after annealing and confirmed by XRD analysis. Band gap energy of the InSe system is deduced from the DRS measurements and found to be 1.3 eV. SEM analysis revealed that selenium (Se) content plays an important role in determining the surface morphology of the film. InSe thin film diode structure was fabricated as W/InSe/Cu system. The estimated values of barrier height for the film of thickness 3000 Å and 7000 Å are 0.65 eV and 0.61 eV respectively. Thickness dependent schottky nature of the InSe/Cu thin film diode is discussed in detail.
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Kumar, R.S.,Sudhagar, P.,Matheswaran, P.,Sathyamoorthy, R.,Kang, Y.S. Elsevier 2010 Materials science & engineering. B, Advanced funct Vol.172 No.3
The surface modification of the ZnO seed layer by ultrasonic mediated rinsing (UMR) was realized as an efficient tool for growing highly branched hierarchical ZnO nanorods through multistage approach. The hierarchical ZnO nanostructure achieved through UMR approach was performed as the photoanodes in dye-sensitized solar cells (DSSCs). The DSSC based on the novel branched network resulted in energy conversion efficiency (η) of 1.1% (J<SUB>sc</SUB>=4.7mAcm<SUP>-2</SUP>). The improved device performance was ascribed to the (a) high internal surface area for efficient dye adsorption, (b) rapid electron pathway for charge transport from ZnO to transparent conducting oxide (TCO) substrate and (c) producing random multiple scattering of the light within the hierarchical network leading to photon localization, thereby increasing the probability of the interaction between the photons and the dye molecules of the branched network. The beneficial effect of the UMR approach was distinguished by fabricating DSSCs based on randomly oriented ZnO nanorods prepared by conventional rinsing (CR), which offered lower conversion efficiency η=0.7% (J<SUB>sc</SUB>=3.8mAcm<SUP>-2</SUP>). The exploration of novel hierarchical ZnO nanorods grown in the present work by the low temperature solution growth techniques may pave way to bring out photoanode material on flexible substrates for the fast growing DSSCs devices.
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