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Highly Integrated C-Band GaN High Power Amplifier MMIC for Phased Array Applications
Youn Sub Noh,In Bok Yom THE INSTITUTE OF ELECTRICAL ENGINEERS 2015 IEEE Microwave and Wireless Components Letters Vol. No.
<P>A C-band high-power and high power added efficiency (PAE) high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) fabricated by using 0.25 μm gallium nitride (GaN) high electron mobility transistor (HEMT) technology has been developed for phased array antennas. The MMIC operates in pulse conditions of 100 μs pulse width and 10% of duty cycle over the frequency from 5.2 to 6.8 GHz. The MMIC exhibits an output power of 45.7 dBm to 46.4 dBm and a power added efficiency (PAE) of 51.5% to 56.5% under a drain voltage of 30 V. The MMIC size is as small as 12.54 mm<SUP>2</SUP>, generating an output power density up to 3.48 W/mm<SUP>2</SUP> over the chip area and up to 4.55 W/mm over the active periphery.</P>
A Linear GaN High Power Amplifier MMIC for <roman> Ka</roman>-Band Satellite Communications
Noh, Youn Sub,Yom, In Bok THE INSTITUTE OF ELECTRICAL ENGINEERS 2016 IEEE Microwave and Wireless Components Letters Vol. No.
<P>A linear high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) is designed with 0.15 mu m gallium nitride (GaN) high electron mobility transistor (HEMT) technology on silicon carbide (SiC) substrate. To keep the linear characteristics of the power stage, 2: 4: 8 staging ratio of 8 x 50 mu m unit transistor is adapted for the 3-stage HPA MMIC. The MMIC delivers P-3 (dB) of 39.5 dBm with a PAE of 35% at 21.5 GHz. Linear output power (P-L) meeting IMD3 of -25 dBc is 37.3 dBm with an associated PAE of 29.5%. The MMIC dimensions are 3.4 mm x 2.5 mm, generating an output power density of 1049 mW/mm(2).</P>
Ku대역 GaN 저잡음증폭기 집적회로 설계에 관한 연구
노윤섭(Noh Youn Sub),김성일(Kim Seong Il),이상흥(Lee Sang Heung),안호균(Ahn Ho Kyun),임종원(Lim Jong Won) 한국통신학회 2021 한국통신학회 학술대회논문집 Vol.2021 No.11
본 논문은 Ku대역 레이더 시스템에서 사용이 가능한 GaN LNA MMIC는 15~16GHz 대역에서 동작하는 이득 16dB 이상 및 NF 1.65dB 이하의 성능을 보이며, 2단 케스케이드 구조로 설계 및 제작한 집적회로의 크기는 모든 정합회로를 포함하고 있으며 1.8mm X 1.1mm이다.