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Green Bonds Driving Sustainable Transition in Asian Economies: The Case of India
Nisha PRAKASH,Madhvi SETHI 한국유통과학회 2021 The Journal of Asian Finance, Economics and Busine Vol.8 No.1
On September 25, 2015, 193 countries of the United Nations (UN) General Assembly, signed the 2030 Agenda to work towards attaining 17 Sustainable Development Goals (SDGs) and its associated 169 targets and 232 indicators. With one of the largest renewable energy programs, India is well-poised to be a role model for low-carbon transformation to other Asian countries. However, bridging the financing gap is critical to ensure that the country meets its SDG targets. Though the SDGs identified by the UN are broad-based and interdependent, for ease of analysis we have grouped them into five themes – people, planet, prosperity, peace, and partnership – based on existing UN models. This paper investigates the financing gap for ‘green’ projects linked to planet-related SDG targets in India. It builds an argument for utilizing green bonds as an instrument to bridge the gap. After establishing the potential of green bonds in raising the finance to meet India’s planet-related SDG targets, we look at the current policy landscape and suggest recommendations for successful execution. The paper concludes that deepening of the corporate fixed income securities market and firming up guidelines in line with India’s climate action plans are inevitable before green bonds can be considered a viable financing option.
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Arun Barvat,Nisha Prakash,Gaurav Kumar,Dilip K. Singh,Anjana Dogra,Suraj P. Khanna,Prabir Pal 한국물리학회 2018 Current Applied Physics Vol.18 No.2
We report the electronic structure of Molybdenum disulfide (MoS2) ultrathin 2D films grown by pulsed laser deposition (PLD) on top of GaN/c-Al2O3 (0001) substrates annealed up to 550 C in an ultrahigh vacuum. Our X-ray photoemission spectroscopy (XPS) study shows that the grown films are mixed phase character with semiconducting 2H and metallic 1T phases. After ultrahigh vacuum (UHV) annealing, the 1T/2H phase ratio is significantly modified and film-substrate bonding becomes the leading factor influencing variation of mixed phase compositions. The semiconducting phase is partially transformed to metallic phase by thermal annealing; suggesting that the metallic phase observed here may indeed have more stability compared to the semiconducting phase. The notable enhancement of the 1T/2H ratio induces significant changes in Ga 3d core level spectra taken from bare GaN and MoS2/GaN sample. The impact of S and/or Mo atoms on the Ga core level spectra is further pronounced with the thermal annealing of grown films. The analysis shows that an enhancement of 1T metallic phase with thermal annealing in MoS2 layers is manifested by the occurrence of new spectral component in the Ga 3d core level spectra with the formation of Ga-S adlayer interaction through the Ga bonding in defect assisted GaN structure.
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