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Studies of N-Doped p-ZnO Layers Grown on c-Sapphire by Radical Source Molecular Beam Epitaxy
S. V. Ivanov,A. El-Shaer,M. Al-Suleiman,A. Bakin,A. Waag,O. G. Lyublinskaya,N. M. Shmidt,S. B. Listoshin,R. N. Kyutt,V. V. Ratnikov,A. Ya. Terentyev,B. Ya. Ber,T. A. Komissarova,L. I. Ryabova,D. R. Kh 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 − 400 ℃), slightly O-rich conditions, and post-growth annealing in the range of 650 − 800 ℃ results in efficient nitrogen pdoping with Hall hole concentration 3 × 1017 cm−3. The details of the structural and the electrical characterizations of the films are discussed. We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 − 400 ℃), slightly O-rich conditions, and post-growth annealing in the range of 650 − 800 ℃ results in efficient nitrogen pdoping with Hall hole concentration 3 × 1017 cm−3. The details of the structural and the electrical characterizations of the films are discussed.
Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs
Lee, In-Hwan,Polyakov, A. Y.,Hwang, Sung-Min,Shmidt, N. M.,Shabunina, E. I.,Tal'nishnih, N. A.,Smirnov, N. B.,Shchemerov, I. V.,Zinovyev, R. A.,Tarelkin, S. A.,Pearton, S. J. American Institute of Physics 2017 Applied Physics Letters Vol.111 No.6