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RISS 인기검색어
- 검색키워드
- 저자 : N. J. Suthan Kissinger (검색결과 3 건)
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J. Suthagar,N. J. Suthan Kissinger,G. M. Sharli Nath,K. Perumal 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.1
ZnSe1−xTex films with different tellurium (Te) contents were deposited by using an electron beam(EB) evaporation technique onto glass substrates for applications to optoelectronic devices. Thestructural and the optical properties of the ZnSe1−xTex films were studied in the present work. The host material ZnSe1−xTex, were prepared by using the physical vapor deposition method ofthe electron beam evaporation technique (PVD: EBE) under a pressure of 1 × 10−5 mbar. TheX-ray diffractogram indicated that these alloy films had cubic structure with a strong preferentialorientation of the crystallites along the (1 1 1) direction. The optical properties showed that theband gap (Eg) values varied from 2.73 to 2.41 eV as the tellurium content varied from 0.2 to 0.8. Thus the material properties can be altered and excellently controlled by controlling the systemcomposition x.
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N. J. Suthan Kissinger,NATARAJAN VELMURUGAN,K. Perumal 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.4
Zinc-Selenide (ZnSe) thin films were prepared by using physical vapor deposition under a vacuum of 5 × 10−6 Torr by using an electron beam evaporated technique at different substrate temperatures, RT, 100, 200, and 300 ˚C. X-ray diffraction analysis (XRD) indicates that the films are polycrystalline, having a f.c.c zincblende structure irrespective of their substrate temperature. All the films show preferred orientation along the (1 1 1) plane parallel to the substrates. The microstructural parameters, such as the lattice constant, crystallite size, stress, strain, and dislocation density, are calculated, and the effect of substrate temperature on the deposited films was discussed. The grain size of the deposited ZnSe films is observed to be small and is within the range of 12 to 32 nm, and the grain size is observed to be increase from 12.5 to 31.9 nm with increasing substrate temperature. Optical measurements indicate the existence of a direct-bandgap-allowed optical transition with a corresponding energy gap in the range of 2.95 – 2.70 eV. Zinc-Selenide (ZnSe) thin films were prepared by using physical vapor deposition under a vacuum of 5 × 10−6 Torr by using an electron beam evaporated technique at different substrate temperatures, RT, 100, 200, and 300 ˚C. X-ray diffraction analysis (XRD) indicates that the films are polycrystalline, having a f.c.c zincblende structure irrespective of their substrate temperature. All the films show preferred orientation along the (1 1 1) plane parallel to the substrates. The microstructural parameters, such as the lattice constant, crystallite size, stress, strain, and dislocation density, are calculated, and the effect of substrate temperature on the deposited films was discussed. The grain size of the deposited ZnSe films is observed to be small and is within the range of 12 to 32 nm, and the grain size is observed to be increase from 12.5 to 31.9 nm with increasing substrate temperature. Optical measurements indicate the existence of a direct-bandgap-allowed optical transition with a corresponding energy gap in the range of 2.95 – 2.70 eV.
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차준호,K. Ashok,N. J. Suthan Kissinger,라용호,심재관,김진수,이철로 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.3
In this paper, low-resistivity molybdenum (Mo) thin films were deposited on stainless- steel and soda-lime glass substrates with good adhesion at room temperature by using a direct current (DC) magnetron technique. The Mo thin films were annealed at different temperatures in order to enhance their structural and electrical properties so that they could be used for the solar cell applications. The Mo thin film is the bottom electrode used in the chalcopyrite solar cell family (CuInSe<sub>2</sub> and its alloys) because of the low resistivity of the Cu(InGa)Se<sub>2</sub>/Mo contact. X-ray diffraction (XRD) analysis showed that these Mo films were polycrystalline in nature and exhibited better crystallization with increasing crystallite size as the annealing temperature was raised from 400 to 800 ℃. The Mo film’s crystallite size was observed to increase from 80 to 450 nm as the annealing temperature was increased from as-deposited to 800 ℃. The microstructure, surface morphology and homogenous grains, were observed using field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM).
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