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- 저자 : N. El Naga (검색결과 3 건)
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S.N. Chattopadhyay,C. B. Overton,S. Vetter,M. Azadeh,B. H. Olson,N. El Naga 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.3
An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 ㎚ wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.
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Chattopadhyay, S.N.,Overton, C.B.,Vetter, S.,Azadeh, M.,Olson, B.H.,Naga, N. El The Institute of Electronics and Information Engin 2010 Journal of semiconductor technology and science Vol.10 No.3
An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.
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Arivazhagan S.,Naseer K.A.,Mahmoud K.A.,Libeesh N.K.,Arun Kumar K.V.,Naga Kumar K.ChV.,Sayyed M.I.,Alqahtani Mohammed S.,Shiekh E. El,Khandaker Mayeen Uddin 한국원자력학회 2023 Nuclear Engineering and Technology Vol.55 No.9
The practice of identifying the potential zones for mineral exploration in a speedy and low-cost method includes the use of satellite imagery analysis as a part of remote sensing techniques. It is challenging to explore the iron mineralization of a region through conventional methods which are a time-consuming process. The current study utilizes the Hyperion satellite imagery for mapping the iron mineralization and associated geological features in the Irikkur region, Kannur, Kerala. Along with the remote sensing results, the field study and laboratory-based analysis were conducted to retrieve the ground truth point and geochemical proportion to verify the iron ore mineralization. The MC simulation showed for shielding properties indicate an increase in the linear attenuation coefficient with raising the Fe2O3þSiO2 concentrations in the investigated rocks where it is varied at 0.662 MeV in the range 0.190 cm1 - 0.222 cm1 with rising the Fe2O3þSiO2 content from 57.86 wt% to 71.15 wt%. The analysis also revealed that when the g-ray energy increased from 0.221 MeV to 2.506 MeV, sample 1 had the largest linear attenuation coefficient, ranging from 9.33 cm1 to 0.12 cm1 . Charnockite rocks were found to have exceptional shielding qualities, making them an excellent natural choice for radiation shielding applications.
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