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A Linear-Logarithmic CMOS Image Sensor With Adjustable Dynamic Range
Bae, Myunghan,Choi, Byoung-Soo,Jo, Sung-Hyun,Lee, Hee-Ho,Choi, Pyung,Shin, Jang-Kyoo IEEE 2016 IEEE SENSORS JOURNAL Vol.16 No.13
<P>A new pixel structure is proposed for wide dynamic range CMOS image sensors. A pixel based on a three-transistor active pixel sensor has two linear responses and a logarithmic response using additional circuits. The photogate surrounding the n(+)/p-sub photodiode exists for the second linear response. The logarithmic response is due to the biased MOS cascode. The proposed pixel was designed and fabricated using a 0.35-mu m 2-poly 4-metal standard CMOS process. The dynamic range of the pixel is higher than 106 dB. A test chip with a pixel pitch of 10 x 10 mu m(2) and a 160 x 120 pixel array is evaluated.</P>
Dual-Sensitivity Mode CMOS Image Sensor for Wide Dynamic Range Using Column Capacitors
( Sanggwon Lee ),( Myunghan Bae ),( Byoung-soo Choi ),( Jang-kyoo Shin ) 한국센서학회 2017 센서학회지 Vol.26 No.2
A wide dynamic range (WDR) CMOS image sensor (CIS) was developed with a specialized readout architecture for realizing highsensitivity (HS) and low-sensitivity (LS) reading modes. The proposed pixel is basically a three-transistor (3T) active pixel sensor (APS) structure with an additional transistor. In the developed WDR CIS, only one mode between the HS mode for relatively weak light intensity and the LS mode for the strong light intensity is activated by an external controlling signal, and then the selected signal is read through each column-parallel readout circuit. The LS mode is implemented with the column capacitors and a feedback structure for adjusting column capacitor size. In particular, the feedback circuit makes it possible to change the column node capacitance automatically by using the incident light intensity. As a result, the proposed CIS achieved a wide dynamic range of 94 dB by synthesizing output signals from both modes. The prototype CIS is implemented with 0.18-μm 1-poly 6-metal (1P6M) standard CMOS technology, and the number of effective pixels is 176 (H) × 144 (V).
( Hee Ho Lee ),( Myunghan Bae ),( Byoung-soo Choi ),( Jang-kyoo Shin ) 한국센서학회 2016 센서학회지 Vol.25 No.5
In this paper, we propose an AlGaN/GaN-based extended-gate metal-insulator-semiconductor high electron mobility transistor (MISHEMT)-type biosensor for detecting streptavidin-biotin complexes. We measure the drain current of the fabricated sensor, which varies depending on the antibody-antigen reaction of streptavidin with biotin molecules. To confirm the immobilization of biotin polyethylene glycol (PEG) thiol, we analyze the Au surface of a GaN sample using X-ray photoelectron spectroscopy (XPS). The proposed biosensor shows higher sensitivity than Si-based extended-gate metal oxide semiconductor field effect transistor (MOSFET)-type biosensor. In addition, the proposed AlGaN/GaN-based extended-gate MISHEMT-type biosensor exhibits better long-term stability, compared to the conventional AlGaN/GaN-based MISHEMT-type biosensor.
Lee, Jimin,Choi, Byoung-Soo,Bae, Myunghan,Kim, Sang-Hwan,Oh, Chang-Woo,Shin, Jang-Kyoo The Korean Sensors Society 2017 센서학회지 Vol.26 No.4
Conventional CMOS image sensors (CISs) have a trade-off relationship between dynamic range and sensitivity. In addition, their sensitivity is determined by the photodiode capacitance. In this paper, CISs that consist of dual-sensitivity photodiodes in a unit pixel are proposed for achieving wide dynamic ranges. In the proposed CIS, signal charges are generated in the dual photodiodes during integration, and these generated signal charges are accumulated in the floating-diffusion node. The signal charges generated in the high-sensitivity photodiodes are transferred to the input of the comparator through an additional source follower, and the signal voltages converted by the source follower are compared with a reference voltage in the comparator. The output voltage of the comparator determines which photodiode is selected. Therefore, the proposed CIS composed of dual-sensitivity photodiodes extends the dynamic range according to the intensity of light. A $94{\times}150$ pixel array image sensor was designed using a conventional $0.18{\mu}m$ CMOS process and its performance was simulated.
A Low-power CMOS Image Sensor Based on Variable Frame Rate Operation
Byoung-Soo Choi,Eunsu Shin,Myunghan Bae,Sang-Hwan Kim,Jimin Lee,Sang-Ho Seo,Jang-Kyoo Shin 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.6
Various circuits and devices are integrated on the CMOS image sensor (CIS) chip. Sources of power consumption in the CIS include source followers of the pixel array, bias circuits, driving circuits, a noise canceller, and readout circuits. In this paper, a low-power complementary metal oxide semiconductor (CMOS) image sensor based on variable frame rate operation is proposed. Power consumption of bias circuits and source followers of the pixel array is reduced by the variable frame rate operation in the proposed CIS. In most cases, the constant bias current continuously flows through the bias circuits and source followers even if the frame rate is changed. However, results indicate that using the variable frame rate operation reduces the constant bias current of the proposed CIS. Results also indicate that the power consumption is reduced by lowering the frame rate without significant image degradation.
Hybrid UV Active Pixel Sensor Implemented Using GaN MSM UV Sensor and Si-Based Circuit
Chang-Ju Lee,Chul-Ho Won,Myunghan Bae,Jang-Kyoo Shin,Jung-Hee Lee,Sung-Ho Hahm IEEE 2015 IEEE Sensors Journal Vol. No.
<P>A hybrid active pixel sensor (APS) was implemented for ultraviolet (UV) imagers by combining a metal- semiconductor-metal (MSM)-type GaN UV sensor and a standard Si CMOS APS controller. The photodetector region of the APS circuit was replaced by a GaN MSM UV sensor, and it was connected together on the printed circuit board with standard Si CMOS APS circuit chip. The dark and photoresponsive current densities of the fabricated MSM UV sensor were 2.5 × 10<SUP>-6</SUP> and 1.6 × 10<SUP>-3</SUP> A/cm<SUP>2</SUP>, respectively, at 10 V bias. The fabricated hybrid UV APS has clearly distinguishable ON/OFF operation states under dark and 365-nm UV irradiation conditions. The calculated photoresponsivity of the hybrid-type GaN UV APS was as high as 5.1 V/W.</P>