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Myoungbo Kwak,Kimball, D. F.,Presti, C. D.,Scuderi, A.,Santagati, C.,Yan, J. J.,Asbeck, P. M.,Larson, L. E. IEEE 2012 IEEE transactions on microwave theory and techniqu Vol.60 No.6
<P>A high-performance bipolar-CMOS-DMOS (BCD) monolithic envelope amplifier for micro-base-station power amplifiers (PAs) is presented. Measurement of the BCD high-voltage (<I>V</I><SUB>DD</SUB> = 15 V) envelope amplifier shows an efficiency of 72% using 7.7-dB peak-to-average ratio WCDMA input signals at an average envelope amplifier output power above 3 W. A WCDMA envelope-tracking RF PA at 2.14 GHz, including a GaN field-effect transistor RF stage, has an overall drain efficiency above 51%, with a normalized power root-mean-square error below 1.2% and an adjacent channel leakage ratio of -49 dBc at 5-MHz offset using memory-effect mitigation digital pre-distortion, at an average output power above 2 W and a gain of 10 dB.</P>