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Personalized Educational Process Models with Spacing Effect
Mingwen Wang,Yulin Wang 보안공학연구지원센터 2016 International Journal of Hybrid Information Techno Vol.9 No.1
Teaching new material and reviewing what has already been taught are two important activities in the educational process. Different students with different learning abilities need to review at different rates, that is to say, a personalized teaching process is necessary. Review has a spacing effect, namely it is most useful only if it is executed neither too soon nor too late. How should designers of educational software schedule the learning process to satisfy the need that different students learn different material? We present a mathematical model to capture the issue in idealized form. The learning abilities of students and the spacing effect of review are modeled as some input parameters’ constraints on the schedule. Our results include the optimal scheduling in accordance with which tutoring systems teach one student specific material, characteristics of the rate at which new material can be introduced under different conditions, and the reproduction of ladder-like educational process.
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Zengke Jin,Zhenying Liang,Xi Wang,Mingwen Zheng 제어·로봇·시스템학회 2021 International Journal of Control, Automation, and Vol.19 No.1
In this paper, an adaptive sliding mode neural network(NN) control method is investigated for input delaytractor-trailer system with two degrees of freedom. An uncertain camera-object kinematic tracking error model of atractor car with n trailers with input delay is proposed. Radial basis function neural networks(RBFNNs) are appliedto approximate the unknown functions in the error model. A sliding mode surface with variable structure controlis designed by using backstepping method. Then, an adaptive NN sliding mode control method is thus obtained bycombining Lyapunov-Krasovskii functionals. The controller realizes the global asymptotic trajectories tracking ofthe kinematics system. The stability of the closed-loop system is strictly proved by the Lyapunov theory. Matlabsimulation results demonstrate the feasibility of the proposed method.
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Hongxi Liu,Hong Qiu,Xiaobai Chen,Mingpeng Yu,Mingwen Wang 한국물리학회 2009 Current Applied Physics Vol.9 No.6
ZnO:Al films were deposited on glass substrates at 300 K and 673 K by direct current magnetron sputtering with the oblique target. The Ar pressure was adjusted to 0.4 Pa and 1.2 Pa, respectively. All the films have a wurtzite structure and grow with a c-axis orientation in the film growth direction. The films grow mainly with columnar grains perpendicular to the substrate and some granular grains also exist in the films. The film deposited at 673 K and 0.4 Pa has the largest grains whereas that prepared at 300 K and 0.4 Pa consists of the smallest grains and is porous. The films exhibit an n-type semiconducting behavior at room temperature. The ZnO:Al film deposited at 673 K and 0.4 Pa has the lowest resistivity (3.40 × 10-3 Ω cm), the highest free electron concentration (4.63 × 1020 cm-3) and a moderate Hall mobility (4.0 ㎠ V-1 s-1). The film deposited at 300 K and 0.4 Pa has the highest resistivity and the lowest free electron concentration and Hall mobility. A temperature dependence of the resistivity reveals that the carrier transport mechanism is Mott’s variable range hopping in the temperature region below 100 K and thermally activated band conduction above 215 K. The activation energy for the film deposited at 300 K and 0.4 Pa is 41 meV and that for the other films is about 35 meV. All the films have an average optical transmittance of over 85% in the visible wavelength range. The absorption edge of the film deposited at 300 K and 0.4 Pa shifts to the longer wavelength (redshift) relative to the films prepared under the other conditions. ZnO:Al films were deposited on glass substrates at 300 K and 673 K by direct current magnetron sputtering with the oblique target. The Ar pressure was adjusted to 0.4 Pa and 1.2 Pa, respectively. All the films have a wurtzite structure and grow with a c-axis orientation in the film growth direction. The films grow mainly with columnar grains perpendicular to the substrate and some granular grains also exist in the films. The film deposited at 673 K and 0.4 Pa has the largest grains whereas that prepared at 300 K and 0.4 Pa consists of the smallest grains and is porous. The films exhibit an n-type semiconducting behavior at room temperature. The ZnO:Al film deposited at 673 K and 0.4 Pa has the lowest resistivity (3.40 × 10-3 Ω cm), the highest free electron concentration (4.63 × 1020 cm-3) and a moderate Hall mobility (4.0 ㎠ V-1 s-1). The film deposited at 300 K and 0.4 Pa has the highest resistivity and the lowest free electron concentration and Hall mobility. A temperature dependence of the resistivity reveals that the carrier transport mechanism is Mott’s variable range hopping in the temperature region below 100 K and thermally activated band conduction above 215 K. The activation energy for the film deposited at 300 K and 0.4 Pa is 41 meV and that for the other films is about 35 meV. All the films have an average optical transmittance of over 85% in the visible wavelength range. The absorption edge of the film deposited at 300 K and 0.4 Pa shifts to the longer wavelength (redshift) relative to the films prepared under the other conditions.
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