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Deposition Profile Control of Carbon Films on the Surface of Fine Structures using Plasma CVD
Kzunori Koga,Takuya Nomura,Masaharu Shiratani,Yuichi Setsuhara,Makoto Sekine,Masaru Hori 한국표면공학회 2010 한국표면공학회 학술발표회 초록집 Vol.2010 No.11
Deposition profile of DLC and a-C:H films in trenches is one of the concerns to realize coatings on patterned substrates. We have succeeded in controlling deposition profile of Cu in trenches for nano-fabrications, and have realized sub-conformal, conformal and anisotropic deposition. We are applying the deposition profile control method to carbon films in trenches. Deposition rate increases with decreasing the substrate temperature, because carbon etching rate by H atoms decreases with decreasing the substrate temperature. Deposition rate on sidewall and that on bottom decrease with increasing aspect ratio, while deposition rate on top little depends on the aspect ratio. The results suggest that the deposition profile can be controlled by changing deposition condition.
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Yeonwon Kim,Kazunori Koga,Masaharu Shiratani 한국물리학회 2020 Current Applied Physics Vol.20 No.1
We investigated the effect of hydrogen dilution on the Si cluster volume fraction of hydrogenated amorphous films by varying the hydrogen dilution ratio at 0.5 Torr and compared it to that obtained at pure silane discharge at 0.3, 0.4, and 0.5 Torr. The correlation between the plasma emission characteristic, deposition rate, and cluster volume fraction in the hydrogen dilution plasma was described. The cluster volume fractions of films under hydrogen dilution conditions were similar to those of the pure silane but showed a higher deposition rate. The results suggest that under hydrogen dilution conditions, it is possible to maintain a higher deposition rate with a lower cluster incorporation rate.
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