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      저자 : M.A. Majeed Khan (검색결과 3 건)
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        Study of density of localized states in a-Ga x Se100-x alloysusing SCLC measurements

        M. Husain,Shagufta B. Husain,M. Zulfequar,M.A. Majeed Khan 한국물리학회 2004 Current Applied Physics Vol.4 No.5

        DC conductivity measurements have been made as a function of temperature and electric eld on a-GaxSe100-x (0≤x≤10)samples, in order to study the eect of the electric eld and temperature on the conduction mechanism. The present paper reports themeasurements on space charge limited conduction (SCLC) in vacuum evaporated amorphous thin lms of a-GaxSe100-x where 0≤x≤10. At high fields (~10⁴V/cm), the current could be tted to the theory of space charge limited conduction, in case ofuniform distribution of localized states in the mobility gap of these materials. The addition of Gallium (Ga) in a-GaxSe100-x results in an increase in the density of localized states and hence an increase in conductivity.

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        Studies on thin films of lead chalcogenides

        Sushil Kumar,Zishan H. Khan,M.A. Majeed Khan,M. Husain 한국물리학회 2005 Current Applied Physics Vol.5 No.6

        A good deal of information regarding the synthesis and optoelectro-structural properties of thin lms of lead chalcogenideshave been revealed. The development of laser technology had opened up new application for narrow gap lead salts and their alloys.The polycrystalline thin lms were deposited onto optically plane and chemically clean glass substrates by vacuum evaporation tech-nique. The lms were thin, uniform, smooth and tightly adherent to the substrates.Optical absorption spectroscopy, X-ray dirac-tion technique and currentvoltage characteristics method were used to characterize the lms. The absorption coecients andoptical band gaps of lms were determined by using FTIR spectrophotometer. The nature of sample, crystal structure and latticeparameters of lms were found from X-ray diractograms. The dc conductivities and activation energies of lms were measured intemperature range 300380K. Schottky junctions of PbS, PbSe and PbTe with indium metal were made. The barrier heights andideality factors of these metalsemiconductor junctions were determined by usingIV characteristics..

      • KCI등재후보

        Crystallite Structural, Electrical and Luminescent Characteristics of Thin Films of In2O3 Nanocubes Synthesized by Spray Pyrolysis

        M. A. Majeed Khan,Wasi Khan,Maqusood Ahamed,M.S. Alsalhi,Tansir Ahmed 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.1

        The present work describes the synthesis of indium oxide nanocubes (NCs) by a modified sol-gel method and its thin film was deposited by spray pyrolysis method. The sample was characterized by x-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), field emission transmission electron microscope (FE-TEM), fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) techniques in detail. The temperature dependent resistivity of indium oxide thin film was determined in the temperature range of 77 - 350 K which exhibited semiconducting behavior of the sample. The resistivity data were fitted in the Mott's variable range hopping (VRH) model and the density of states was estimated.

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