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RISS 인기검색어
- 검색키워드
- 저자 : Lubin Li (검색결과 3 건)
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The Analysis and Optimization of Personalized Customization Model of Crowdsourcing Based on GSPN
Zhang Yaoqi,Li Yang,Wang Lubin,Wang Chaofan,Tu Yan 보안공학연구지원센터 2016 International Journal of Multimedia and Ubiquitous Vol.11 No.6
The development and customization of new products in crowdsourcing is an important crowdsourcing theory application issue. But as a new business model, there are usually low efficiency, poor effect in the process of enterprises, and in practical application and the combination of businesses. This paper proposes the generalized stochastic Petri net (GSPN) theory in the modeling and performance analysis in crowdsourcing business model, and assesses effectively about the overall model’s time performance and operation efficiency, which has been verified and optimized by 24% in an example. This paper starts from crowdsourcing contest business model to optimize the process and the frame of crowdsourcing through quantitative analysis results, so as to provide a reference for the decision-making party of the business model.
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Molecular characterization and expression analysis of WRKY family genes in Dendrobium officinale
Tao Wang,Zheng Song,Li Wei,Lubin Li 한국유전학회 2018 Genes & Genomics Vol.40 No.3
The WRKY family of transcription factors is one of the most important families of plant transcriptional regulators, and the members regulate multiple biological processes. However, there is limited information on WRKYs in Dendrobium officinale. In this study, 52 WRKY family genes of D. officinale were surveyed for the first time. Conserved domain, phylogenetic, exon–intron construction, and expression analyses were performed for the DoWRKY genes. Two major types of intron splicing (PR and VQR introns) were found, and the intron insertion position was observed to be relatively conserved in the conserved DoWRKY domains. The expression profiles of nine DoWRKYs were analyzed in cold- and methyl jasmonate (MeJA)-treated D. officinale seedlings; the DoWRKYs showed significant expression changes at different levels, which suggested their vital roles in stress tolerance. Moreover, the expression trends of most of the DoWRKYs after the simultaneous cold stress and MeJA treatment were the opposite of those of DoWRKYs after the individual cold stress and MeJA treatments, suggesting that the two stresses might have antagonistic effects and affect the adaptive capacity of the plants to stresses. Twelve DoWRKY genes were differentially expressed between symbiotic and asymbiotic germinated seeds; all were upregulated in the symbiotic germinated seeds except DoWRKY16. These differences in expression of DoWRKYs might be involved in promoting in vitro symbiotic germination of seeds with Tulasnella-like fungi. Our findings will be useful for further studies on the WRKY family genes in orchids.
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High-performance Zinc-Tin-Oxide thin film transistors based on environment friendly solution process
Qian Zhang,Guodong Xia,Lubin Li,Wenwen Xia,Hong-Yu Gong,Sumei Wang 한국물리학회 2019 Current Applied Physics Vol.19 No.2
Zinc-Tin-Oxide (ZTO) thin films were fabricated using a simple and eco-friendly sol-gel method and their application in thin film transistors (TFTs) was investigated. Annealing temperature has a crucial influence on the structure and electrical properties of sol-gel ZTO thin films. The ZTO thin films annealed at 300–600 °C revealed smooth and uniform surfaces with amorphous state, in addition, a high optical transparency over 90% of the ZTO films in the visible range was obtained. The electrical performance of ZTO TFTs showed obvious dependence on annealing temperature. The ZTO TFTs annealed at 500 °C showed a high carrier mobility of 5.9 cm2 /V, high on/off current ratio (Ion/off) of 106 -107 , and threshold voltage (Vth) of 1.03 V. To demonstrate the application of sol-gel ZTO films in low-power display fields, we also fabricated ZTO TFTs with a solution-processed high-permittivity (high-k) ZrTiOx dielectric layer. The ZTO/ZrTiOx TFTs showed high mobility of 17.9 cm2 /V and Ion/off of 105 -106 at a low operation voltage of 3 V, indicating that Indium-free ZTO thin films would be potential candidates for low cost, high performance oxide TFT devices.
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