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Al?Pb nanocomposites made by mechanical alloying and consolidation
A. Csanady,I. Sajo,J.L. Labar,A. Szalay,K. Papp,G. Balaton,E. Kalman 한국물리학회 2006 Current Applied Physics Vol.6 No.2
Pore-free bulk samples were produced by HERF axisymmetrical powder compaction for dierent application purposes in case ofthe immiscible Al and Pb metal pair. The AlPb nanocomposites were made by mechanical milling of atomised Al and Pb powdersin air. The nano Pb and PbO particles were shown by SEM, XRD and TEM (BF, DF, SAED) using the ProcessDiraction method.
Jenei, P.,Yoon, E.Y.,Gubicza, J.,Kim, H.S.,Labar, J.L.,Ungar, T. Elsevier Sequoia 2011 Materials science & engineering. properties, micro Vol.528 No.13
Blends of Cu powders and 3vol.% carbon nanotubes (CNTs) were consolidated by High Pressure Torsion (HPT) at room temperature (RT) and 373K. The grain size, the lattice defect densities as well as the hardness of the composite samples were determined. It was found that the Cu-CNT composite processed at RT exhibited a half as large mean grain size and a three times higher dislocation density than those observed in the specimens either consolidated from pure Cu powder or processed from bulk Cu by HPT. The small grain size and the pinning effect of CNT fragments on dislocations led to significant twin boundary formation during HPT. The increase of the temperature of HPT-processing to 373K resulted in a slight increase of the grain size, and a strong decrease of the dislocation density and the twin boundary frequency in the composite. The correlation between the microstructural parameters and the flow stress calculated from the hardness was discussed.
Dominantly epitaxial growth of graphene on Ni (111) substrate
Fogarassy, Z.,Rummeli, M.H.,Gorantla, S.,Bachmatiuk, A.,Dobrik, G.,Kamaras, K.,Biro, L.P.,Havancsak, K.,Labar, J.L. New York] ; North-Holland 2014 APPLIED SURFACE SCIENCE - Vol.314 No.-
Graphene was grown on a Ni (111) thin layer, used as a substrate. The Ni layer itself was grown on single crystal sapphire (0001). Carbon was deposited by chemical vapor deposition using a mixture of methane, argon and hydrogen at atmospheric pressure implementing a constant gas flow (4.8-5l/min) varying both the gas composition and the deposition temperature (900-980<SUP>o</SUP>C) and cooling rate (8-16<SUP>o</SUP>C/min) in the different experiments. Formation of uninterruptedly grown epitaxial single layer graphene was observed over the Ni (111) thin film substrate. Epitaxial growth was proven through STM measurements. Electron diffraction studies, also confirmed by STM, demonstrated that only one dominant orientation exists in the graphene, both results providing evidence of the epitaxial growth. On top of the, continuous, large area graphene flakes were also observed with sizes varying between 10nm and 10μm. Most of the top flakes are turbostratically related to the continuous underlying epitaxial graphene layer. The formation of the graphene layer with constant dominant orientation was observed over millimeter wide areas. Large areas (~20-40μm in diameter) of continuous, epitaxial graphene, free of additional deposits and flakes were obtained for the best set of growth parameters.