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Velocity Saturation Effects in a Short Channel Si-MOSFET and its Small Signal Characteristics
황상훈,Hyunsik Im,송민규,Koichi Ishida,Toshiro Hiramoto,Takayasu Sakurai 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.2
We fabricated a Si Metal Oxide Semiconductor Field Effect Transistor with a 0.18 μm gate length and analyzed its transport considering the velocity saturation effect. We found that the saturation current (Idsat) transport shows a fractional power dependence on the gate voltage (Vgs), namely, it follows the α-power law MOSFET model, Idsat = B×(Vgs −VTH)α. The main model parameters α and B were extracted from the measured Idsat−Vgs characteristics. The value of α was around 1.6. The channel length modulation factor (λ) and gate trans-conductance (gm) were investigated as functions of Vgs. We also present the small signal characteristics by using a simple analog amplifier circuit consisting of one transistor and one resistor, demonstrating that a small signal can be well modeled by using the α-power law MOSFET model.