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金漢超 釜山大學校 學生生活硏究所 1979 硏究報 Vol.15 No.1
This report employed the data which were collected by the research Institute for the Unification in the Busan National University in 1978. For the report twelve items among the questionnaire were sellected in order to the comparative analysis between Seoul and Busan college students. According the χ²-test, it shows that only two items among twelve items have not any meaningfull differences of the attitudes between Seoul and Busan college students. Therefor It could interpreted that the students of the two areas have shown different attitudes in many fields. The differences in the attitudes of the students of the two areas could be summarized as fsollows. A) Personal life aspects 1) The interest to the daily news is more polarized in Seoul students than in Busan. 2) The score of mother preference is more high in Seoul students than Busan. 3) Busan Students depend personal expencies more on their parents than Seoul Students. According to the above tendencies, it could be said that Seoul college students have shown more positive in their personal life than Busan college students. B) Status orientation 1) Busan college students have more preference to the power oriented occupations as high class administrator, enterpriser, and judicial officer, than Seoul college students. 2) Seoul college students have more preference to the professional occupations as medical doctor and college professor, than Busan colledge students. The above differential of the two areas could be interpreted as follow: The Busan college students show more power oriented tendencies than the Seoul college students. C) Attitude to college 1) The degree of satisfaction to the specialty in college is more high in the Seoul college student group than in the Busan group. 2) To choose the deficiencies of the professors, the Busan students indicate the internal aspects of the professors, but the Seoul students indicate the external aspects of the professors. Generally speaking, according to the above mention, the students of the two areas, Busan and Seoul, show the difference tendencies in many aspects. It could be interpreted that the difference are originated from the different background of the two areas.
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Direct-laser-patterned friction layer for the output enhancement of a triboelectric nanogenerator
Kim, Daewon,Tcho, Il-Woong,Jin, Ik Kyeong,Park, Sang-Jae,Jeon, Seung-Bae,Kim, Weon-Guk,Cho, Han-Saem,Lee, Heung-Soon,Jeoung, Sae Chae,Choi, Yang-Kyu Elsevier 2017 Nano energy Vol.35 No.-
<P><B>Abstract</B></P> <P>Among the many types of wasted energy around us, mechanical energy has been considered to have a considerable amount of potential to be scavenged due to its abundance and ubiquity in our lives. To convert ambient mechanical energy into electrical energy efficiently, the triboelectric nanogenerator (TENG) has been intensively studied. Polydimethylsiloxane (PDMS), due to its superior mechanical and electrical properties, has commonly been selected as a friction layer in TENGs. Herein, it is newly discovered that the output power of a fabricated TENG is highly correlated with the Young's modulus of PDMS. An enhancement of the output power is achieved by the optimization of the PDMS mixture ratio. In addition, to improve the output power of the TENG further, a well-ordered microstructure was directly created on the surface of the PDMS by means of ultrafast laser irradiation. Direct patterning to create the surface morphology on the PDMS surface with the aid of laser irradiation is more efficient than conventional surface modification techniques such as replication and a few microfabrication steps. Compared to a control TENG using bare PDMS, an increase in the output power of more than twofold is achieved by an experimental TENG using patterned PDMS with a laser power of 29mW. The TENG utilizing the patterned PDMS achieves a maximum output power density level of 107.3μW/cm<SUP>2</SUP>.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Direct-laser-patterned polydimethylsiloxane (PDMS) is utilized as a triboelectric dielectric layer. </LI> <LI> Correlation between the Young's modulus of the PDMS and the corresponding electrical performance of the TENG is discovered. </LI> <LI> Optimal condition of laser power for maximum electrical output power is experimentally analyzed. </LI> <LI> By using femtosecond laser irradiation, micro/nanostructures are directly patterned on an appropriately prepared PDMS. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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Tcho, Il-Woong,Jeon, Seung-Bae,Park, Sang-Jae,Kim, Weon-Guk,Jin, Ik Kyeong,Han, Joon-Kyu,Kim, Daewon,Choi, Yang-Kyu Elsevier 2018 Nano energy Vol.50 No.-
<P><B>Abstract</B></P> <P>A triboelectric nanogenerator (TENG) is an energy harvester which converts ambient mechanical energy into electrical energy. A disk-based rotational TENG converts rotational mechanical energy into electrical energy with advantages over a vertical contact-separation based TENG. Since the disk-based TENG operates in grating-based sliding mode, its electrical output is advantageous in terms of prolonged continuous energy harvesting. However, rotational mechanical energy is less abundant than linear mechanical energy in typical environments. In this work, a new disk-based TENG which converts linear mechanical energy into electrical energy through the use of a gear system (linear-to-rotational TENG, LR-TENG) was fabricated as an experimental device. A TENG based on a vertical contact-separation mode (V-TENG), composed of identical triboelectric materials, was also fabricated as a control device. Here, it is experimentally demonstrated that the electrical output of the LR-TENG was superior to that of the V-TENG at the same magnitude of applied force and at an identical level of applied mechanical energy, as the surface charge density of the LR-TENG is much greater than that of the V-TENG. The LR-TENG can effectively provide power to numerous small electronic devices. Examples include charging a commercial capacitor and lighting commercial LEDs.</P> <P><B>Highlights</B></P> <P> <UL> <LI> A disk-based rotational TENG operated by rotational force converted from linear force by a gear system, is demonstrated. </LI> <LI> Linear mechanical energy is more abundant than rotational mechanical energy in our environment. </LI> <LI> The electrical output of this linear-to-rotational TENG was superior to that of the vertical contact-separation TENG. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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Jeon, Seung-Bae,Kim, Weon-Guk,Park, Sang-Jae,Tcho, Il-Woong,Jin, Ik-Kyeong,Han, Joon-Kyu,Kim, Daewon,Choi, Yang-Kyu Elsevier 2019 Nano energy Vol.65 No.-
<P><B>Abstract</B></P> <P>In the internet of things (IoT) era, electronic textile (E-textile), which combines diverse functional parts on a fabric substrate, has attracted much attention. Among the various components for E-textile, the human-machine interface device is one of the most important. Here, a wearable fabric touchpad based on a triboelectric generator (TEG) is demonstrated. It is created only with inexpensive commercialized fabrics. Long string-shaped fabric TEGs act as the rows and columns of a crossline array, and each cross-point of a unit cell at each row and column constructs a unit pixel. The proposed touchpad accurately traces basic motions such as the vertical tapping and lateral dragging of a polytetrafluoroethylene (PTFE) stylus and generates corresponding output signals. Based on this capability, the proposed touchpad can be utilized for the handwriting of digits and for their recognition as well. Digits from 0 to 9 written on the touchpad are successfully classified by a pre-trained neural network with very high accuracy of 98%. This implies that the proposed wearable touchpad has immediate practicality. Considering its cost-effectiveness, compatibility with the textile industry, and its accurate operation, the proposed touchpad is a strong candidate for use in interface devices in the future E-textile industry.</P> <P><B>Highlights</B></P> <P> <UL> <LI> A self-powered wearable touchpad was demonstrated using a fabric-based TEG array. </LI> <LI> Only cheap commercialized fabrics were employed for the general usage. </LI> <LI> Basic touchpad operation was experimentally verified. </LI> <LI> A digit recognition program was integrated to the proposed touchpad. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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Self-powered wearable keyboard with fabric based triboelectric nanogenerator
Jeon, Seung-Bae,Park, Sang-Jae,Kim, Weon-Guk,Tcho, Il-Woong,Jin, Ik-Kyeong,Han, Joon-Kyu,Kim, Daewon,Choi, Yang-Kyu Elsevier 2018 Nano energy Vol.53 No.-
<P><B>Abstract</B></P> <P>In Internet of Things (IoT) era, electronic textiles (E-textiles), which combine various functional devices on a fabric, have attracted attention. Among various components for E-textiles, the human-machine interface device, for example, a keyboard, is one of the most important parts. The triboelectric nanogenerator (TENG) can be a powerful sensing component for the interface device due to its cost-effectiveness, design flexibility and self-powered operation. Previous studies reported fabric-based sensor devices with TENG, but as yet, no device that harnesses commercial compatibility with the textile industry has been reported. It is timely to explore a low-cost TENG-based keyboard made completely of commercial fabric for early commercialization. This paper proposes a TENG-based wearable keyboard that uses only cheap commercial fabrics. Each cell in the proposed keyboard generates electrical signals according to an external touch without any power supply. After an appropriate filtering process, the proposed keyboard can detect a key stroke without any ambiguity. We verify the keyboard operation by typing a word and playing music. The material dependency of the proposed keyboard is experimentally validated with various material pairs. Finally, the endurance of the proposed keyboard against folding, repeated touches and washing is experimentally confirmed for actual applications in a real environment.</P> <P><B>Highlights</B></P> <P> <UL> <LI> A self-powered wearable keyboard was demonstrated using a fabric-based TENG array. </LI> <LI> Only cheap commercialized fabrics were employed for the general usage. </LI> <LI> External contact material-irrelevant characteristic was experimentally verified. </LI> <LI> Endurance against to harsh conditions including folding and washing, was validated. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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Self-powered data erasing of nanoscale flash memory by triboelectricity
Jin, Ik Kyeong,Park, Jun-Young,Lee, Byung-Hyun,Jeon, Seung-Bae,Tcho, Il-Woong,Park, Sang-Jae,Kim, Weon-Guk,Han, Joon-Kyu,Lee, Seung-Wook,Kim, Seong-Yeon,Bae, Hagyoul,Kim, Daewon,Choi, Yang-Kyu Elsevier 2018 Nano energy Vol.52 No.-
<P><B>Abstract</B></P> <P>Irrecoverable data destruction on a mobile device is important to prevent unintentional data disclosure. In this regard, transient electronics, a form of electronics that can be made to disappear or can be destroyed in a controllable manner, has been actively researched. To erase data completely, irreversible reactions such as physical or chemical destruction have been used. However, these techniques either require external voltage or destroy a memory device so that it cannot be reused. Here, we demonstrate a novel self-powered data-erasing method for nanoscale flash memory devices which uses triboelectricity <I>via</I> a kill switch, which consists of a nylon pad connected to a gate electrode of the flash memory. Through a one-time touch of the kill switch by a finger wearing a polytetrafluoroethylene (PTFE) glove, data stored in flash memory is set to the ‘1′ state on the chip scale simultaneously with low-level triboelectricity, allowing the memory to be reused afterward. Moreover, the memory can be permanently destroyed by a single touch of the kill switch with a finger without a glove that generates high-level triboelectricity. These erase methods provide a rapid and convenient means of self-powered irrecoverable data erasing in the era of the Internet of Things (IoT).</P> <P><B>Highlights</B></P> <P> <UL> <LI> First demonstration of data erasing for a silicon-based flash memory without external voltage using triboelectricity. </LI> <LI> A memory state of the nanoscale flash memory is changed from a program state to the erase state when triboelectricity is induced to a gate electrode. </LI> <LI> This triboelectric data erasing without external power supply is 10<SUP>6</SUP>-fold faster than a conventional erasing method with external power supply. </LI> <LI> First demonstration of two-level data-erasing that offers both reusable erasing and permanent destruction against threatening of hacking. </LI> <LI> This triboelectric data erasing is applicable to commercial silicon-based flash memory, which has been used for solid-state drive (SSD) and USB memory. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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