http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Dasgupta-Schubert, N.,Tiwari, D.K.,Francis, E. Reyes,Martinez Torres, P.,Villasenor Cendejas, L.M.,Lara Romero, J.,Villasenor Mora, C. Techno-Press 2017 Advances in nano research Vol.5 No.3
Multiwalled carbon-nanotubes (MWCNT) and micro-structured carbon, such as biochar or activated carbon (AC), have been seen to significantly increase the growth indices of certain plant species such as maize (Zea mays L.). Seed imbibition is the stage where environmental factors that affect water transport across the seed coat barrier, make a large impact. This work explores the effect on water imbibition by maize seeds when the aqueous environment surrounding the seed is diluted by small concentrations (10 and 20 mg/l) of pristine MWCNT (p-MWCNT), carboxylate functionalized MWCNT (COO-MWCNT) and AC. The degree of sensitivity of the process to (i) large structural changes is seen by utilizing the nano (the MWCNT) and the micro (the AC) allotropic forms of carbon; (ii) to small changes in the purity and morphology of the p-MWCNT by utilizing 95% pure and 99% pure p-MWCNTs of slightly differing morphologies; and (iii) to MWCNT functionalization by using highly pure (97%) COO-MWCNT. Water imbibition was monitored over a 15 hour period by Near Infrared Thermography (NIRT) and also by seed weighing. Seed surface topography was seen by SEM imaging. Analysis of the NIRT images suggests rapid seed surface topological changes with the quantity of water imbibed. While further work is necessary to arrive at a conclusive answer, this work shows that the imbibition phase of the maize seed is sensitive to the presence of MWCNT even to small differences in the purity of the p-MWCNT and to small differences in the physicochemical properties of the medium caused by the hydrophilic COO-MWCNT.
Analysis of reverse tunnelling current in GaInN light-emitting diodes
Cho, J.,Mao, A.,Kim, J.K.,Son, J.K.,Park, Y.,Schubert, E.F. IET 2010 Electronics letters Vol.46 No.2
<P>The characteristics of the reverse leakage current of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) are examined with various <I>n</I>-type GaN doping concentrations and interpreted by using a tunnelling current model. Changing the doping concentration of the <I>n</I>-type GaN influences the tunnelling probability of electrons into the conduction band and thus the reverse leakage current. Reducing the doping concentration of the top 150 nm portion of the <I>n</I>-type GaN layer by half decreases the tunnelling probability, resulting in decrease of the reverse leakage current by 80% at %10%V without deterioration of any forward electrical properties of LEDs.</P>