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- 저자 : K. Raja Reddy (검색결과 3 건)
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Influence of substrate temperature on physical properties of sprayed Zn0.85Mn0.15O films
L. Raja Mohan Reddy,P. Prathap,K.T. Ramakrishna Reddy 한국물리학회 2009 Current Applied Physics Vol.9 No.3
Zn1-xMnxO thin films have been synthesized by chemical spray pyrolysis at different substrate temperatures in the range, 250–450 ℃ for a manganese composition, x = 15%, on corning 7059 glass substrates. The as-grown layers were characterized to evaluate their chemical and physical behaviour with substrate temperature. The change of dopant level in ZnO films with substrate temperature was analysed using X-ray photoelectron spectroscope measurements. The X-ray diffraction studies revealed that all the films were strongly oriented along the (002) orientation that correspond to the hexagonal wurtzite structure. The crystalline quality of the layers increased with the increase of substrate temperature up to 400 ℃ and decreased thereafter. The crystallite size of the films varied in the range, 14–24 nm. The surface morphological studies were carried out using atomic force microscope and the layers showed a lower surface roughness of 4.1 nm. The optical band gap of the films was ~3.35 eV and the electrical resistivity was found to be high, ~104Ωcm. The films deposited at higher temperatures (>350 ℃) showed ferromagnetic behaviour at 10 K. Zn1-xMnxO thin films have been synthesized by chemical spray pyrolysis at different substrate temperatures in the range, 250–450 ℃ for a manganese composition, x = 15%, on corning 7059 glass substrates. The as-grown layers were characterized to evaluate their chemical and physical behaviour with substrate temperature. The change of dopant level in ZnO films with substrate temperature was analysed using X-ray photoelectron spectroscope measurements. The X-ray diffraction studies revealed that all the films were strongly oriented along the (002) orientation that correspond to the hexagonal wurtzite structure. The crystalline quality of the layers increased with the increase of substrate temperature up to 400 ℃ and decreased thereafter. The crystallite size of the films varied in the range, 14–24 nm. The surface morphological studies were carried out using atomic force microscope and the layers showed a lower surface roughness of 4.1 nm. The optical band gap of the films was ~3.35 eV and the electrical resistivity was found to be high, ~104Ωcm. The films deposited at higher temperatures (>350 ℃) showed ferromagnetic behaviour at 10 K.
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Nandanapalli, Koteeswara Reddy,Mudusu, Devika,Lingandhinne, Raja Mohan Reddy,Mitta, Sekhar Babu,K. Reddy, Gunasekhar,Karuppannan, Ramesh,Whang, Dongmok Elsevier 2019 JOURNAL OF ALLOYS AND COMPOUNDS Vol.770 No.-
<P><B>Abstract</B></P> <P>Tin (II) sulfide (SnS), one of the most abundant materials, is being considered as an absorber material for the development of low-cost and nontoxic solar cell devices. In this direction, we have developed nanocrystalline films of SnS with uniform morphology on different substrates by adopting two-step thermal evaporation process. The surface studies show that irrespective of substrate nature, the as-grown SnS films possess uniform surface-morphology with well-defined facets. Structural studies reveal that SnS films grown on various substrates possess an orthorhombic crystal structure. However, as compared to other substrates, the structures developed on sapphire and copper exhibit ⟨010⟩ as preferential growth direction. From the electrical measurements, it is noticed that the films deposited on highly-conductive substrates consist of low electrical resistance, whereas the films are slightly resistive on insulating substrates. Based on these investigations it is emphasized that high-quality SnS films can be developed with uniform morphology on any substrates by adopting our two-step process.</P> <P><B>Highlights</B></P> <P> <UL> <LI> SnS films were developed with uniform morphology by using two-step process. </LI> <LI> The films grown on different substrates possess nanocrystallites with well-defined facets. </LI> <LI> These films consist of excellent chemical stoichiometry and phase purity. </LI> <LI> SnS films grown on different substrates have either ⟨111⟩ or ⟨010⟩ growth direction. </LI> </UL> </P>
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