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장현규,정동윤,권성규,조두형,박건식,Jong-Wong Lim 한국전자통신연구원 2021 ETRI Journal Vol.43 No.6
In this study, we present a venting clip for high‐power applications that is intended to reduce stray inductance. To reduce the stray inductance of packages in high‐power applications, the proposed venting clip features slots are inserted onto a conventional clip. A conventional clip and the proposed venting clip were designed and fabricated to compare the respective stray inductance. The inductance of the proposed venting clip was approximately 15.8% than that of the conventional clip at a frequency of 100 kHz. Through a comparison between the conventional and venting clips, it is confirmed that the proposed venting clip is superior for high‐power applications in terms of decreasing inductance. With reduced inductance, the switching‐loss for such applications is also expected to decrease. Moreover, the impedance of the venting clip decreased by approximately 15.5% compared with that of the conventional clip at a frequency of 100 kHz. The venting clip, which has reduced resistive component, is also expected to decrease conduction loss in high‐power applications.
김상일(Sang-Il Kim),임병옥(Byeong-Ok Lim),최길웅(Gil-Wong Choi),이복형(Bok-Hyung Lee),김형주(Hyoung-Joo Kim),김륜휘(Ryun-Hwi Kim),임기식(Ki-Sik Im),이정희(Jung-Hee Lee),이정수(Jung-Soo Lee),이종민(Jong-Min Lee) 한국전자파학회 2013 한국전자파학회논문지 Vol.24 No.2
본 논문에서는 Si가 도핑된 Modulation-doped AlGaN/GaN 이종 접합 구조를 가지는 전력증폭기용 MISHFET 소자를 제작하였다. 제작된 GaN TR 소자는 6H-SiC(0001)의 Substrate 위에 성장시켰으며, 180 nm의 gate length를 가진다. 제작된 소자를 측정한 결과, 837 ㎃/㎜의 최대 드레인 전류 특성, 177 mS/㎜의 gm(Tranconductance)을 가지며, fT는 45.6 ㎓, f㎃X는 46.5 ㎓로 9.3 ㎓에서 1.54 W/㎜의 전력 밀도와 40.24 %의 PAE를 가지는 것으로 확인되었다. This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited ㎃ximum drain current density of 837 ㎃/㎜ and peak transconductance of 177 mS/㎜. A unity current gain cutoff frequency was 45.6 ㎓ and maximum frequency of oscillation was 46.5 ㎓. The reported output power density was 1.54 W/㎜ and A PAE(Power Added Efficiency) was 40.24 % at 9.3 ㎓.