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Baek, Jinwook,Lee, Myeongsoo,Kim, Jungmo,Lee, Jinsup,Jeon, Seokwoo Elsevier 2018 Carbon Vol.127 No.-
<P><B>Abstract</B></P> <P>Chemical vapor deposition (CVD) is the most promising, relatively inexpensive approach for the growth of high quality graphene. However, the need to transfer the graphene to dielectric substrates limits its usage in electronic applications. Here, we demonstrate transfer-free growth of graphene on dielectric substrates via mobile hot-wire (MHW) assisted dual heating system (DHS). MHW is utilized as independent heat source over polymer/Ni/SiO<SUB>2</SUB>/Si, which is placed on a bottom heater. The hot-wire scan speed (V<SUB>w</SUB>, 0.01–40 mm/min) and temperature (T<SUB>w</SUB>) are varied to control the diffusion kinetics and amount of carbon source into nickel by changing the cooling rate of hot zone where nucleation and growth of graphene occurs between Ni and SiO<SUB>2</SUB>. The optimum growth condition for single-layer graphene is further verified through controlling the substrate temperature (T<SUB>sub</SUB>, 430–630 °C). We also improve coverage of graphene by changing polymers as a function of thermal stability. The results show that thermal decomposition temperature determines the amount of the carbon dissolved into nickel for graphene growth. Through our synthesis, we can obtain nearly full-coverage of single-layer graphene. We believe our simple method of growing graphene is potentially scalable and advances the possibility of various electrical and optical applications.</P> <P><B>Graphical abstract</B></P> <P>Transfer-free growth of graphene from a dual heating system is developed. The dual heating system allows a higher amount of carbon diffusion into nickel layer, which is related to the graphene coverage, than that of the conventional hot-wall type chemical vapor deposition. Moreover, Coverage and crystallinity of as-grown graphene are enhanced when using thermally stable polymer as a carbon source.</P> <P>[DISPLAY OMISSION]</P>
Growth of graphene on non-catalytic substrate by controlling the vapor pressure of catalytic nickel
Baek, Jinwook,Kim, Jungmo,Kim, Jin,Shin, Byungha,Jeon, Seokwoo Elsevier 2019 Carbon Vol.143 No.-
<P><B>Abstract</B></P> <P>Here, we demonstrate a simple method of growing graphene directly on various dielectric substrate using vapor-phase metal catalyst via mobile hot-wire (MHW) assisted chemical vapor deposition (CVD). The MHW made of nickel (Ni) is utilized as an independent source of the metal vapor as well as a moving heat source. The hot-wire temperature (T<SUB>w</SUB>, 800–1100 °C) and the total chamber pressure (P<SUB>tot</SUB>, 0.1–760 torr) determine the equilibrium partial vapor pressure of nickel (P<SUB>Ni</SUB>, ∼10<SUP>−11</SUP> to ∼ 10<SUP>−3</SUP> torr). When the equilibrium P<SUB>Ni</SUB> is built in the chamber, reaction between Ni vapor and carbon feedstock in a gaseous phase results in deposition of carbon containing Ni particles on dielectric substrate. The optimum growth conditions for low-defect and uniform graphene are found at the substrate temperature (T<SUB>sub</SUB>) of 700 °C and the speed of MHW (V<SUB>w</SUB>) near 1.0 mm/min, which determines the nucleation and lateral growth of graphene from the deposited Ni particles. Consequently, the P<SUB>Ni</SUB> was clarified as a primary factor for graphene grown on non-catalytic substrate (NCS) by comparing the graphene grown by solid and vapor-phase metal catalyst. We believe the results contribute to the understanding of the direct-growth mechanism of graphene on NCS.</P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Baek Jinwook,Novak Travis G.,vKim Houngkyung,Lee Jinsup,Jang Byoungwook,Lee Junseok,전석우 나노기술연구협의회 2017 Nano Convergence Vol.4 No.35
In this work, we present the experimental investigation on the contact resistance of graphene/single-walled carbon nanotube (SWCNT) junction using transfer length method with the simple equivalent circuit model. We find that p–n like junctions are formed in graphene/SWCNT transistors, and the contact resistance in the junction is observed to be ~ 494 and ~ 617 kΩ in case of metallic SWCNT (m-SWCNT) and semiconducting SWCNT (s-SWCNT), respectively. In addition, the contact resistance increases from 617 to 2316 kΩ as Vg increases from − 30 to − 10 V. Through our study, high carrier density induced from doping in both graphene and SWCNT leads to low contact resistance. This development of contact engineering, namely modulation of carrier density in the junction and contact length (Lcon) scaling shows the potential for all-carbon based electronics.
백진욱 ( Jinwook Baek ) 한국창의정보문화학회 2020 창의정보문화연구 Vol.6 No.3
최근, 코비드 환경은 대학의 교육 시스템에 심각한 영향을 끼쳤다. 대학의 재학률과 취업률에 큰 영향을 미치는 학생의 진로지도 방법은 코비드 환경에서 변할 수밖에 없다. 기존의 진로지도 활동은 오프라인 상담 방법을 주로 사용하지만, 코비드 환경에서의 진로지도 활동은 온라인 상담 방법을 더 중요하게 고려해야 한다. 본 논문에서는 온라인과 오프라인 교육 환경에서 효과적으로 사용할 수 있는 하이브리드(온라인과 오프라인) 진로지도 모델을 제안한다. 온라인과 오프라인의 특성을 가진 하이브리드 제안 모델은 코비드 환경에서도 학생들을 효과적으로 지도 할 수 있다. 본 논문에서는 제안 모델을 실제 상담 사례에 적용하여 제안 모델의 유용성을 보였다. Recently, the COVID environment has had a serious impact on the university education system. Career guidance methods of students, which have a significant impact on enrollment and employment rates of universities, should be changed in the COVID environment. While a traditional career guidance activity mainly use offline counseling methods, it should consider online counseling methods more seriously in the COVID environment. In this paper, I propose a hybrid(online and offline) career guidance model that can be effectively used in both online and offline education environments. The proposed hybrid model, which has the characteristics of online and offline, can effectively guide college students even in the COVID environment. In this paper, I show the usefulness of the proposed model by applying it to a real-world counseling case.
백진욱 ( Jinwook Baek ) 한국창의정보문화학회 2021 창의정보문화연구 Vol.7 No.4
인공지능 등의 4차 산업 기술의 발전과 코로나 상황으로 인해 최근의 대학 사회는 급격하게 변화하고 있다. 대학의 입시 환경도 심각하게 어려워지고 있어 대학 내에서 학과와 전공이 급속하게 변화하고 있다. 따라서, 대학의 학과는 학과의 내ㆍ외부 환경에 따라 새로운 전공 또는 융합 전공을 위한 교육과정을 개발할 필요가 있다. 하지만, 이러한 교육과정을 정확하게 개발하는 것은 매우 어렵고 긴 시간이 걸리는 작업이다. 본 논문에서는 국가직무능력표준(NCS)을 사용한 교육과정 개발 방법과 적용 사례를 제안하고 있다. 본 논문에서 제시한 교육과정 개발 방법은 전통적인 3단계 방식, 즉 분석, 설계, 그리고 개발로 구성되어 있으며, 각 단계에서 NCS를 활용하였다. 본 논문에서 제안한 방법은 교육과정 개발의 시간을 줄이는 것에 중점을 두었으며, 제안한 방법의 유용성을 보여주기 위해서 교육과정 개발의 한 사례를 제시하였다. Because of the development of the 4th industrial technology such as artificial intelligence and the corona situation, the recent university society is rapidly changing. As the college entrance exam environment is also getting seriously difficult, departments and majors are rapidly changing at the university. Therefore, the department of the university needs a curriculum for new majors or convergence majors according to the internal and external environment of the department. However, it is a very difficult and time-consuming task to develop such a curriculum accurately. This paper proposes a curriculum development method and an application case using the National Competency Standards(NCS). The curriculum development method proposed in this paper consists of the traditional three-step method, namely, analysis, design, and development, and NCS is used in each step. This proposed method focused on reducing the time of curriculum development, and an example of curriculum development is presented for the usefulness of the proposed method.