http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Xueqi Guo,Yuheng Zeng,Zhi Zhang,Yuqing Huang,Mingdun Liao,Qing Yang,Zhixue Wang,Minyong Du,Denggao Guan,Baojie Yan,Jichun Ye 한국물리학회 2019 Current Applied Physics Vol.19 No.7
The junction properties of tunnel silicon oxide (SiOx) passivated contact (TOPCon) with n-type poly-Si on p-type c-Si wafer are characterized using current-voltage (J-V) and capacitance-voltage (C-V) measurements. The dark J-V curves show a standard diode characteristic with a turn-on voltage of ∼0.63 V, indicating a p-n junction is formed. While the C-V curve displays an irregular shape with features of 1) a slow C increase with the decrease of the magnitude of reverse bias voltage, being used to estimate the built-in potential (Vbi), 2) a significant increase at a given positive bias voltage, corresponding to the geometric capacitance crossing the ultrathin SiOx, and 3) a sharp decrease to negative values, resulting from the charge tunneling through the SiOx layer. The C of depleting layer deviates from the normal linear curve in the 1/C2-V plot, which is caused by the diffusion of P dopants from the n-type poly-Si into the p-type c-Si wafer as confirmed by the electrochemical capacitance-voltage measurements. However, the 1/C2+γ-V plots with γ > 0 leads to linear curves with a proper γ and the Vbi can still be estimated. We find that the Vbi is the range of 0.75–0.85 V, increases with the increase of the doping ratio during the poly-Si fabrication process, and correlates with the passivation quality as measured by the reverse saturated current and implied open circuit voltage extracted from transient photoconductivity decay.
Low ambient oxygen prevents atherosclerosis
Kang, Ju-Gyeong,Sung, Ho Joong,Amar, Marcelo J.,Pryor, Milton,Remaley, Alan T.,Allen, Michele D.,Noguchi, Audrey C.,Springer, Danielle A.,Kwon, Jaeyul,Chen, Jichun,Park, Ji-hoon,Wang, Ping-yuan,Hwang, Springer-Verlag 2016 Journal of molecular medicine Vol.94 No.3
<P>Large population studies have shown that living at higher altitudes, which lowers ambient oxygen exposure, is associated with reduced cardiovascular disease mortality. However, hypoxia has also been reported to promote atherosclerosis by worsening lipid metabolism and inflammation. We sought to address these disparate reports by reducing the ambient oxygen exposure of ApoE-/- mice. We observed that long-term adaptation to 10 % O-2 (equivalent to oxygen content at similar to 5000 m), compared to 21 % O-2 (room air at sea level), resulted in a marked decrease in aortic atherosclerosis in ApoE-/- mice. This effect was associated with increased expression of the anti-inflammatory cytokine interleukin-10 (IL-10), known to be anti-atherogenic and regulated by hypoxia-inducible transcription factor-1 alpha (HIF-1 alpha). Supporting these observations, ApoE-/- mice that were deficient in IL-10 (IL10-/- ApoE-/- double knockout) failed to show reduced atherosclerosis in 10 % oxygen. Our study reveals a specific mechanism that can help explain the decreased prevalence of ischemic heart disease in populations living at high altitudes and identifies ambient oxygen exposure as a potential factor that could be modulated to alter pathogenesis. Key messages Chronic low ambient oxygen exposure decreases atherosclerosis in mice. Anti-inflammatory cytokine IL-10 levels are increased by low ambient O-2. This is consistent with the established role of HIF-1 alpha in IL10 transactivation. Absence of IL-10 results in the loss of the antiatherosclerosis effect of low O-2. This mechanism may contribute to decreased atherosclerosis at high altitudes.</P>