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Kuiling Zu,Jianxia Li,Shubin Dong,Yunyu Zhao,Shenjian Xu,Zhixiang Zhang,Liangcheng Zhao 한국유전학회 2017 Genes & Genomics Vol.39 No.6
As a specialized seed appendage, the aril is a noteworthy and taxonomically important feature of Celastrus orbiculatus; the aril also has important ornamental value and biological functions. To better understand the mechanism of aril development, paraffin sections were used to examine its morphogenesis, and RNA-sequencing (RNA-seq) technology was employed for transcriptional profiling of the developing aril. Our results revealed that the aril of C. orbiculatus was formed by the cells of the exostomal region of the outer integument. By analyzing global changes in the transcriptome, 41,560,806, 42,789,340, and 44,496,748 clean reads from three cDNA libraries were generated and assembled into 87,600 unigenes with N50 of 1328 bp, in which 31,971 (36.49%) were annotated to Nr database. Furthermore, a total of 25,914 (29.79%), 14,394 (16.4%) and 11,957 (13.65%) genes were successfully annotated with hierarchical 48 GO terms, 26 KOGs and 32 KEGG pathways. Totally, 104, 1887 and 1967 differently expressed genes were identified in CO-F2 versus CO-F3, CO-F2 versus CO-YF1 and CO-F3 versus CO-YF1, respectively. GO and KEGG pathway analyses of DEGs involved in cell–cell communication and plant hormone signal transduction contributed to aril development were identified. Furthermore, we found putative key target genes of WRKY, Aux/IAA, ARF and MADS-box family’s transcription factors related to aril development. Real-time qPCR was performed on eight genes randomly selected from important transcription factors to validate the expression profiles obtained by RNA-seq. This work provides a platform for future genetic and functional genomics research on the molecular mechanisms of aril structure, and expands our understanding of the molecular mechanism and evolutionary analysis of aril development in other members of the Celastraceae.
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Recent Progress of Gr/Si Schottky Photodetectors
Qingguo Shao,Hao Qi,Chao Li,Kunpeng Cai,Jianxia Dong,Xuhui Liu,Ning Cao,Xiaobei Zang 대한금속·재료학회 2023 ELECTRONIC MATERIALS LETTERS Vol.19 No.2
By combing the carrier mobility of graphene with the excellent light absorption properties of silicon, ultra-shallow Schottkyjunction can be obtained, and can exist stably for a long time. The photoelectric property of Schottky junction is determinednot only by graphene and silicon semiconductor layer, but also by the interface layer between the two. Through a series ofoptimizations, the performance of graphene/silicon Schottky junction photodetectors can be continuously improved. Asa result, graphene/silicon Schottky junctions more promising for the development of next generation photodetectors withits stability, ease of preparation and sensitivity. In this review, we firstly give a brief introduction to Gr Schottky junctionphotodetectors, and then present a comprehensive review on the recent progress of optimizing Gr/Si Schottky junction photodetectorsin the past few years, including light management engineering, band engineering and interfacial engineering. Finally, the current challenges are summarized and further perspectives are outlined.
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