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Cheng Chen,Taotao Ding,Zhiqiang Qi,Wei Zhang,Jun Zhang,Juan Xu,Jingwen Chen,Jiangnan Dai,Changqing Chen 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.4
The periodically ordered ZnO nanorod (NR) arrays have been successfully synthesized via a hydrothermal approach on thesilicon substrates by templating of the TiO2ring deriving from the polystyrene (PS) nanosphere monolayer colloidal crystals(MCC). With the inverted MCC mask, sol–gel-derived ZnO seeds could serve as the periodic nucleation positions for thesite-specific growth of ZnO NRs. The large-scale patterned arrays of single ZnO NR with good side-orientation can be readilyproduced. According to the experimental results, the as-integrated ZnO NR arrays showed an excellent crystal quality andoptical property, very suitable for optoelectronic applications such as stimulated emitters and ZnO photonic crystal devices.
Pure Ultraviolet Emission from ZnO Quantum Dots-Based/GaN Heterojunction Diodes by MgO Interlayer
Cheng Chen,Renli Liang,Jingwen Chen,Jun Zhang,Shuai Wang,Chong Zhao,Wei Zhang,Jiangnan Dai,Changqing Chen 대한금속·재료학회 2017 ELECTRONIC MATERIALS LETTERS Vol.13 No.4
We demonstrate the fabrication and characterization of ZnO/GaNbasedheterojunction light-emitting diodes (LEDs) by using air-stableand solution-processable ZnO quantum dots (QDs) with a thin MgOinterlayer acting as an electron blocking layer (EBL). The ZnO QDs/MgO/p-GaN heterojunction can only display electroluminescence(EL) characteristic in reverse bias regime. Under sufficient reversebias, a fairly pure ultraviolet EL emission located at 370 nm derivingfrom near band edge of ZnO with a full width at half maximum(FWHM) of 8.3 nm had been obtained, while the deep-level emissionhad been almost totally suppressed. The EL origination andcorresponding carrier transport mechanisms were investigatedqualitatively in terms of photoluminescence (PL) results and energyband diagram.