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Nauman Malik Muhammada,Navaneethan Duraisamy,Khalid Rahman,Hyun Woo Dang,Jeongdae Jo,Kyung Hyun Choi 한국물리학회 2013 Current Applied Physics Vol.13 No.1
An all printed resistive memory device, a 9-bit memristor, has been presented in this study consisting of 3 x 3 memristor crossbars deposited via electrohydrodynamic inkjet printing process at room conditions. Transparent zinc oxide active nano-layers, directly deposited by electrospray process, are sandwiched between the crossbars to complete the metaleinsulator metal structure consisting of copper ezinc oxideesilver, where Cu and Ag are used as bottom and top electrodes respectively. The 9-bit memristor device has been characterized using currentevoltage measurements to investigate the resistive switching phenomenon thereby confirming the memristive pinched hysteresis behavior signifying the readewrite and memory characteristics. The memristor device showed a current bistability due to the existence of metaleoxide layer which gives rise to oxygen vacancies upon receiving the positive voltage hence breaking down into doped and un-doped regions and a charge transfer takes place. The maximum ON/OFF ratio of the current bi-stability for the fabricated memristor was as large as 1 x 103, and the endurance of ON/OFF switchings was verified for 500 readewrite cycles. The metale insulatoremetal structure has been characterized using X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscope techniques.