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Bright single photon sources in lateral silicon carbide light emitting diodes
Widmann, Matthias,Niethammer, Matthias,Makino, Takahiro,Rendler, Torsten,Lasse, Stefan,Ohshima, Takeshi,Ul Hassan, Jawad,Tien Son, Nguyen,Lee, Sang-Yun,Wrachtrup, Jö,rg American Institute of Physics 2018 Applied Physics Letters Vol.112 No.23
Adsorption Kinetics of Acid Red on Activated Carbon Web Prepared from Acrylic Fibrous Waste
M. Salman Naeem,Saima Javed,Vijay Baheti,Jakub Wiener,M. Usman Javed,Syed Zameer Ul Hassan,Adnan Mazari,Jawad Naeem 한국섬유공학회 2018 Fibers and polymers Vol.19 No.1
In this work, activated carbon (AC) web was prepared using physical activation under the layer of charcoal in high temperature furnace. The carbonization of acrylic fibrous waste was performed at different temperatures (800 ℃, 1000 ℃, and 1200 ℃) with heating rate of 300 oC/h and at different holding time. At 1200 ℃, the heating rate of 300 ℃/h and no holding time provided better results of surface area as compared to carbonization at 800 ℃ and 1000 ℃. The activated carbonweb (AC) prepared at 1200 oC was used for removal of Acid Red 27 dye from aqueous media by varying different parameters like initial concentration of dye, stirring speed, adsorbent dosage, and pH. The results were evaluated using non-linear forms of Langmuir and Freundlich isotherms. The Freundlich isotherm was found to describe the results more effectively because of non-homogenous surface of activated carbon web. Further, the kinetics of adsorption was examined using linear and nonlinearforms of pseudo 1st order and pseudo 2nd order.
SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer
Engin Arslan,Semih Çakmakyapan,Özgür Kazar,Serkan Bütün,Sefer Bora Li esivdin,Neval A. Cinel,Gülay Ertas,Sükrü Ardal,Engin T ras,Jawad-ul-Hassan,E. Janzén,Ekmel Özbay 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.2
Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one highmobility carrier (3493 cm2/Vs at 300 K) and one low-mobility carrier (1115 cm2/Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.