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Deep UV Photoresists;Dissolution Inhibitor
Sang-Yeon Shim,James V. Crivello 한국유화학회 2000 한국응용과학기술학회지 Vol.17 No.3
A new class of deep UV Photoresist based on the principles of chemical amplification was developed. This photoresist consists of three basic elements: a copolymer, blocked tetrabromobisphenol-A as a dissolution inhibitor and a photosensitive onium salt as a photoacid generator. On irradiation followed by a post exposure bake, tert-butoxycarbonyloxy phenyl group is converted to phenol group. Thus the initially base insoluble resin is converted under UV irradiation to a base soluble resin which may be preferentially removed by dissolution. This new photoresist display high sensitivity, 10 mJ/cm2.