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Simulation of the Optical Anomaly in a Mo/Si Multilayer System for an EUV Reflector
InYongKang,YoungTaeLee,정용재,HyeongJoonKim,SungMinHur,SeungYoonLee,JinhoAhn,윤종승,ChangKyungKim 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.4
The performance of multilayer extreme ultraviolet (EUV) re ector has direct bearing on the process throughput and cost of new technology. Using 80 layers of a Mo/Si model and 120 layers of a Ru/Mo/Si model, we intended in this work to show that the re ectivity of the Bragg re ector can be improved by an optical anomaly based on a relative alteration of the layer thickness. As a result, by using the Mo/Si model with the thicknesses of the Mo layers increased equally and the Ru/Mo/Si model with the thicknesses of Ru layers increased equally, we obtained the maximum re ectivity enhancement eect. This quantitative analysis of the optical anomaly can be utilized to optimize the optical properties of the existing Mo/Si system as well as to provide fundamental insights into the science involved in a Bragg EUV reflector.
Structural Analysis of Mo/Si EUV Reflector by optical Modeling
In Yong Kang,Yong-Chae Chung,Chan-Yeup Chung,Jinho Ahn,Seung Yoon Lee,Taegeun Kim 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.43 No.51
The performance of a multilayer extreme ultraviolet (EUV) re ector has direct bearing on the process throughput and the cost of new technology. Using measured data from a real, manufactured re ector, we intended, in this work, to show that the re ectivity of the Bragg re ector can be factorized by using structural parameters such as the d-spacing, density, inter-diusion layers, and oxidation layer. This quantitative analysis of the re ectivity derived from the structural parameters can be utilized to optimize the optical properties of the existing Mo/Si system and to provide fundamental insights into the science involved in a Bragg EUV refl ector.
Defect Characterization of Ru/Mo/Si EUV Reflector by Optical Modeling
In Yong Kang,정용재,오혜근,안진호 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.3
The defect printability of Mo/Si and Ru/Mo/Si multilayer (ML) systems for EUV re ector was quantitatively investigated by monitoring an aerial image on the wafer. For the calculation of the aerial image intensity of a patterned ML mask containing a phase defect, SOLID-EUV, which is capable of rigorous electromagnetic-eld computation, was employed. The aerial-image intensity of a Ru/Mo/Si model was calculated and compared with the value for a Mo/Si model for various defect widths, heights, and positions. The calculated aerial images of the patterned mask system turned out to be mainly dependent on the defect width and the position in the mask. Through the investigation of the aerial-image characteristics of the two models, it can be reasonably concluded that the Ru/Mo/Si model seems to be consistent with the Mo/Si model for all cases.
Aerial Image Characteristics of a Modified Absorber Model for Extreme Ultraviolet Lithography (EUVL)
In-Yong Kang,Yong-Chae Chung,Jinho Ahn,오혜근 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.6
The aerial image characteristics of the modified absorber model with various sidewall angles were quantitatively investigated by calculating the near field intensity on a mask and the aerial image intensity on a wafer. For the calculation of the near field intensity and the aerial image intensity of a 25-nm isolated patterned mask, SOLID-EUV, which is capable of a rigorous electromagnetic-field computation, was employed. The aerial image intensity of a patterned mask with positive and negative sidewall angles was calculated and compared with the value of the vertical sidewall model for various sidewall angle and illumination angle variations. Through the investigation of the aerial image characteristics of various absorber models, the absorber model with a positive sidewall angle can be suggested as the optimal absorber design to minimize the shadowing effect.
Yong-ChaeChung,김윤석,InYongKang,HanchulKima,김덕수,JayJ.Kim 한양대학교 세라믹연구소 2002 Journal of Ceramic Processing Research Vol.3 No.3
The equilibrium lattice constants for various rock salt structure type compounds were predicted by an ab-initio pseudopotential method adapted in the Vienna Ab-initio Simulation Program (VASP), and the values were compared with the experimental lattice constants found in the literature to check the transferability of the pseudopotential of each atom. The results clearly indicate that a well-transferable pseudopotential is essential to predict the material properties of complex ionic systems consisting of many different kinds of atoms. The equilibrium lattice constants for various rock salt structure type compounds were predicted by an ab-initio pseudopotential method adapted in the Vienna Ab-initio Simulation Program (VASP), and the values were compared with the experimental lattice constants found in the literature to check the transferability of the pseudopotential of each atom. The results clearly indicate that a well-transferable pseudopotential is essential to predict the material properties of complex ionic systems consisting of many different kinds of atoms.
Mo/Si Multilayer for EUV Lithography Applications
SeungYoonLee,HyungJoonKim,JinhoAhn,InYongKang,정용재 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.4
Extreme ultraviolet (EUV) re ective multilayers were deposited and characterized. Since control of the d-spacing is critical for higher re ectivity, an effective and accurate d-spacing measurement technology is required. Even though cross-sectional transmission electron microscopy (TEM) and low-angle X-ray diffraction (XRD) are standard methods in evaluating multilayers, they provide dierent d-spacing values from each other. Cross-sectional TEM images can give a direct measurement of the individual layer, but cannot describe the optical behavior of the multilayer. On the contrary, low-angle XRD analysis can provide an eective d-spacing, which includes the non-ideal factors. As a result, low-angle XRD can predict the EUV peak position more precisely than TEM analysis. Additionally, Ru/Mo/Si multilayers were deposited and characterized. These exhibit interfacial layer structures and re ectivities superior to those of Mo/Si multilayers.