http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
I. C. Robin,C. Tavares,J. Rothman,G. Feuillet,A. H. El-Shaer,A. Bakin,A. Waag,Le Si Dang 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
The structural and the spectroscopic properties of a 2-inch ZnO epilayer grown by using molecular beam epitaxy are investigated. A 500-nm-thick substrate was grown on c-sappire by using a MgO buffer. In spite of the high dislocation density in the epilayer, temperature-dependent photoluminescence measurements show only a small decrease in the luminescence intensity between 4 K and 300 K. Time-resolved photoluminescence measurements reveal a decay time independent of temperature. Cathodoluminescence presents an inhomogeneous emission on a micrometric scale: a stronger emission is measured in small nanometric areas. A tentative explanation of this behavior is proposed.
Photoluminescence Dynamics in ZnO Nanorods
I. C. Robin,B. Gauron,M. Rosina,P. Ferret,C. Tavares,G. Feuillet,Le Si Dang,B. Gayral,J. M. Gera 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Low-temperature cathodoluminescence and temperature-dependent time-resolved photoluminescence are used to investigate the emission properties of ZnO nanowires grown by using metal organic vapor-phase epitaxy. In particular, temperature-dependent decay-time measurements show that at temperatures up to room temperature, the escape toward non-radiative channels is limited in the ZnO nanowires. Low-temperature cathodoluminescence and temperature-dependent time-resolved photoluminescence are used to investigate the emission properties of ZnO nanowires grown by using metal organic vapor-phase epitaxy. In particular, temperature-dependent decay-time measurements show that at temperatures up to room temperature, the escape toward non-radiative channels is limited in the ZnO nanowires.
I. C. Robin,A. Jouini,C. Tavares,J. Rothman,G. Feuillet,D. Ehrentraut,T. Fukuda 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Homoepitaxial layers grown by liquid phase epitaxy on hydrothermally grown ZnO bulk wafers are studied by means of temperature-dependent photoluminescence. The properties of the films are compared to those of hydrothermal ZnO substrates. The effect of Ga doping is studied. Liquid phase epitaxy is shown to be a promising method for achieving substantial variations of the electrical and the luminescent properties of ZnO.