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Liangzhi Li,Huaxing Zhang,Jiaolong Fu,Chao Hu,Yayue Zheng,Yexian Qiu 한국생물공학회 2012 Biotechnology and Bioprocess Engineering Vol.17 No.2
To maximize the productivity of ribitol, which is an important starting material for the production of one expensive rare sugar, L-ribose, the effects of culture medium and agitation speed on cell growth as well as on the productivity of ribitol were thoroughly investigated in a 7 L fermentor. The maximum volumetric productivity,0.322 g/L/h of ribitol, were obtained at an initial glucose concentration of 200 g/L in a batch culture. Based on the optimum glucose concentration, the ribitol yield conversed from glucose was up to 0.193 g/g when 1% yeast extract was used as a nitrogen source. When the agitation speed was maintained at 200 rpm, the ribitol concentration of 38.60 g/L was collected after 120 h of cultivation time. Additionally, the scheme of two-phase agitation and glucose infusion was employed. To begin, in the first 24 h of fermentation, a high agitation rate at 350 rpm and the initial glucose concentration of 50 g/L were applied, and the biomass concentration of 25.50 g/L was achieved at 36 h of incubation; whereas this value was observed until 60 h in the former batch fermentation methods. Then, in the second phase, with the agitation speed reduced to 150 rpm and the infusion amount of glucose controlled at 150 g/L,the yield of ribitol reached to 65.00 g/L in two-phase agitation fermentation and was 1.68 fold of that obtained in one-stage batch fermentation. To our knowledge, this study first demonstrates its significant effectiveness in improving ribitol production with the application of Trichosporonoides oedocephalis ATCC 16958.
Ultra-Low Temperature Poly-Si Thin Film Transistor for Plastic Substrate
Takashi Noguchi,Do Young Kim,Hans S. Cho,Huaxing Yin,Hyuck Lim,권장연,Ji Sim Jung,Jong Man Kim,Kyung Bae Park,Xiaoxin Zhang 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200 C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 % by using Xe sputtering and poly-Si film with maximum grain size of 1 μm. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm2/V·sec on glass and 15 cm2/V·sec on plastic by using ultra low temperature process at below 200 C, respectively..