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- 저자 : Hong Kwangjoon (검색결과 35 건)
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Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxy
Hong, Kwangjoon,Baek, Seungnam The Korea Association of Crystal Growth 2003 韓國結晶成長學會誌 Vol.13 No.3
The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_{2}$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV, The exciton peak, $I_{1}^{d}$ at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_{1}^{d}$ peak was dominantly observed in the ZnSe/GaAs : Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs : Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{se}-V_{zn})-V_{zn}$.
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Effect of Thermal Annealing on CdIn2S4 Thin Films Grown by Using Hot Wall Epitaxy
Kwangjoon Hong,Sangyoul Lee 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.6
After the CdIn$_2$S$_4$ films grown by hot-wall epitaxy method had been annealed in Cd-, S-, and In-atmospheres, the point defects were investigated by using a low-temperature photoluminescence (PL) experiment. In the as-grown CdIn$_2$S$_4$ films, the free excitons corresponding to the light hole and the heavy hole were observed, and their splitting gap was 8.2 meV. The gap was associated with the strain caused by the lattice mismatch between the substrate and the film in the heterojunction growth. By means of thermal annealing in various atmospheres, the (D$^{\rm o}$, X) emission was observed to originate from the V$_{\rm S}$ or Cd$_{int}$. From this emission, the E$_{\rm D}$ value of the donor impurity level was 0.1950 eV. Also, the emission between the free electrons and the acceptor holes (FA) became a dominant peak after treatment in a S atmosphere, and the E$_{\rm A}$ value of the acceptor level turned out to be 0.2371 eV. Thus, the origin of the FA emission is related to V$_{\rm Cd}$ or S$_{\rm int}$. These PL results led us to confirm that CdIn$_2$S$_4$ : S is converted into the optical p-type semiconductor. In addition, the origin of the donor-acceptor pair emissions was recombination between donors, such as V$_{\rm S}$ or Cd$_{int}$, and acceptors, such as V$_{\rm Cd}$ or S$_{\rm int}$. Based on these PL results, we have schemed a new energy-level diagram for the recombination process in CdIn$_2$S$_4$.
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Optical Properties of a p-CdIn2Te4 Single Crystal by the Bridgman Method
Kwangjoon Hong 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
A single crystal of p-CdIn2Te4 was grown in a three-stage vertical electric furnace by using the Bridgman method. The quality of the grown crystal was investigated by X-ray diraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown CdIn2Te4 crystal and various heat-treated crystals, the (D0, X) emission was found to be the dominant intensity in the photoluminescence spectrum of CdIn2Te4, while the (A0, X) emission completely disappeared in CdIn2Te4 : Cd. However, the (A0, X) emission in the photoluminescence spectrum of CdIn2Te4 : Te was the dominant intensity as in the as-grown CdIn2Te4 crystal. These results indicate that the (D0, X) emission is associated with VTe, which acted as donor, and that the (A0, X) emission is related to VCd, which acted as acceptor, respectively. The p-CdIn2Te4 crystal was actually found to be converted into n-type after annealing in Cd atmosphere. The origin of (D0, A0) emission and its TO phonon replicas is related to the interaction between donors such as VTe or Cdint and acceptors such as VCd or Teint. Also, the In in the CdIn2Te4 was conrmed not to form native defects, because it existed in a stable bonding form.
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Optoelectrical Properties for CuAlSe2 Epilayers Grown by Using a Hot Wall Epitaxy Method
Kwangjoon Hong,Seongnam Baek 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
CuAlSe2(112)/GaAs(100) heteroepitaxial layers were grown by using a hot wall epitaxy (HWE) method. From the measurements of the Laue patterns and the double crystal X-ray diffraction, the CuAlSe2 epilayer was confirmed to have been epitaxially grown along the <112> direction on the GaAs (100) substrate. The Hall mobility and the carrier density of the CuAlSe2 epilayer at 293 K were estimated to be 295 cm2/V·sec and 9.24 × 1016 cm.3, respectively. This mobility is about one order higher than the reported value. From the temperature dependence of the Hall mobility, the scattering at high temperatures was mainly due to the acoustic mode of the lattice vibration, and the scattering at low temperatures was predominantly due to the impurity effect. From the low-temperature PL experiment, we observed a sharp and intensive free-exciton peak at 2.7918 eV. That peak is usually not detected because of the difficulty in growing single crystals of high quality. Also, this peak existed at a much shorter wavelength than the 2.739 eV of the free exciton measured from an epilayer grown by using the metalorganic chemical-vapor deposition (MOCVD). These facts indicate that the CuAlSe2 epilayers grown by using the HWE method are higher quality crystals than those grown by using MOCVD or other methods.
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Optoelectrical properties of CuInSe2 thin films grown using hot wall epitaxy
Kwangjoon Hong,Hyuk Jung 한양대학교 세라믹연구소 2007 Journal of Ceramic Processing Research Vol.8 No.6
In this study, the photocurrent (PC) spectroscopy of undoped p-type CIS layers has been investigated at temperatures ranging from 10 to 293 K. Three peaks, A, B, and C, corresponded to the intrinsic transition from the valence band states of Γ7(A), Γ6(B), and Γ7(C) to the conduction band state of Γ6, respectively. Crystal field splitting and spin orbit splitting were found at 0.0059 and 0.2301 eV, respectively, and the temperature dependence of the optical band gap could be expressed using the empirical equation Eg(T)=Eg(0)-(8.57×10−4)T2/(T+129). But the behavior of the PC was different from that generally observed in other semiconductors: the PC intensities decreased with decreasing temperature. From the relation of log Jph vs 1/T, where Jph is the PC density, the dominant level was observed at the higher temperatures. We suggest that in undoped p-type CIS layers, the trapping center limits the PC signal due to native defects and impurities with decreasing temperature. In this study, the photocurrent (PC) spectroscopy of undoped p-type CIS layers has been investigated at temperatures ranging from 10 to 293 K. Three peaks, A, B, and C, corresponded to the intrinsic transition from the valence band states of Γ7(A), Γ6(B), and Γ7(C) to the conduction band state of Γ6, respectively. Crystal field splitting and spin orbit splitting were found at 0.0059 and 0.2301 eV, respectively, and the temperature dependence of the optical band gap could be expressed using the empirical equation Eg(T)=Eg(0)-(8.57×10−4)T2/(T+129). But the behavior of the PC was different from that generally observed in other semiconductors: the PC intensities decreased with decreasing temperature. From the relation of log Jph vs 1/T, where Jph is the PC density, the dominant level was observed at the higher temperatures. We suggest that in undoped p-type CIS layers, the trapping center limits the PC signal due to native defects and impurities with decreasing temperature.
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Kwangjoon Hong 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
CdIn2S4 (110) films were grown on semi-insulating GaAs (100) by using a hot wall epitaxy method. The photocurrent (PC) spectra in the temperature range of 30 and 10 K had three peaks in the short wavelength region. The three peaks, A-, B-, and C-excitons, were found to correspond to intrinsic transitions from the valence band states of ..4(z), ..5(x), and ..5(y) to the exciton below the conduction band state of ..1(s), respectively. A 0.122-eV crystal field splitting and a 0.017-eV spin-orbit splitting were obtained. Thus, the temperature dependence of the optical band gap obtained from the PC measurement was well described by Eg(T) = 2.712 eV . (7.65 × 10.4 eV/K)T2/(425 + T). However, the behavior of the PC was different from that generally observed in other semiconductors. The PC intensities decreased with decreasing temperature. Such a phenomenon has never been reported for a PC experiment on the bulk crystals grown by using the Bridgman method. From the relation of log Jph vs 1/T, where Jph is the PC density, two dominant levels were observed, one at high temperatures and the other at low temperatures. Consequently, trapping centers due to native defects in the CdIn2S4 film are suggested to be the causes of the decrease in the PC signal with decreasing temperature.
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The Growth and Photoconductive Characteristics of ?? Thin Films by the Hot Wall Epitaxy
Hong, Kwangjoon,Suh, Sangseok,Jeong, Junwoo,You, Sangha,Choi, Seungpyung,Lee, Koankio,Lee, Sangyoul,Kim, Haeyeon,Moon, Jongdae,Shin, Yongjin,Kim, Haesuk CHOSUN UNIVERSITY 1997 Basic Science and Engineering Vol.1 No.1
The CdS₁? Se? thin films were grown on the GaAs(100) wafers by a Hot Wall Epitaxy method (HWE). The temperatures the source and the substrate temperature are 580℃ and 440℃ respectively. The crystalline structure of thin films was investigated by double crystal X-ray diffraction (DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(r), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time.
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