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Hideto Tada,Masafumi Kobune,Koji Fukushima,Hisashi Oshima,Daisuke Horit,Akihiro Tamura,Yusuke Daiko,Atsushi Mineshige,Tetsuo Yazawa,Hironori Fujisawa,Masaru Shimizu,Hideshi Yamaguchi,Koichiro Honda 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.2
The structural characteristics, the mechanism of crystal growth, and the ferroelectric properties of partially Sm-substituted perovskite bismuth-samarium-nickel-titanate [(Bi1−xSmx)(Ni0.5Ti0.5)- O3; BSNT, x = 0− 0.9] thin films deposited on Pt(100)/MgO(100) substrates by rf sputtering have been investigated using X-ray diffraction, transmission electron microscope, and polarization - electric field hysteresis loop measurements. The fabricated BSNT samples with x≥0.6 were confirmed to have a single-phase perovskite structure. Of the four samples (x = 0.6 0.7, 0.8, and 0.9) with a single-phase perovskite structure, the c-axis-oriented epitaxial BSNT film with x = 0.9 exhibited the best hysteresis loop, with a remanent polarization of 2 μC/cm2 and a coercive field of 100 kV/cm. The structural characteristics, the mechanism of crystal growth, and the ferroelectric properties of partially Sm-substituted perovskite bismuth-samarium-nickel-titanate [(Bi1−xSmx)(Ni0.5Ti0.5)- O3; BSNT, x = 0− 0.9] thin films deposited on Pt(100)/MgO(100) substrates by rf sputtering have been investigated using X-ray diffraction, transmission electron microscope, and polarization - electric field hysteresis loop measurements. The fabricated BSNT samples with x≥0.6 were confirmed to have a single-phase perovskite structure. Of the four samples (x = 0.6 0.7, 0.8, and 0.9) with a single-phase perovskite structure, the c-axis-oriented epitaxial BSNT film with x = 0.9 exhibited the best hysteresis loop, with a remanent polarization of 2 μC/cm2 and a coercive field of 100 kV/cm.
Toru Yamaji,Hideto Tada,Koji Fukushima,Msafumi Kobune,Tetsuo Yazawa 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.2I
Bismuth lanthanum titanate (BLT) films with compositions of (1-x)Bi3.25La0.75Ti3O12 + xBi2O3, where x = 0.28 . 0.36, were successfully deposited on Pt(111)/SiO2/Si(100) substrates by rf-magnetron sputtering using a powder target. All the BLT films were confirmed to have a single-phase bismuth-layer perovskite structure without the presence of a secondary phase. The x = 0.28 and 0.30 BLT films exhibited rounded grain morphologies with an average grain size of approximately 320 nm. On the other hand, BLT films with excess Bi2O3 of x 0.32 had significantly enhanced grain growth, exhibiting oval grain morphologies with an average grain size of approximately 500 nm × 200 nm. From the results for the J . E characteristics, the x = 0.30 BLT films showed the highest electrical insulation. The x = 0.30 BLT film also showed the best hysteresis loop shape with a remanent polarization of 2Pr = 31 μC/cm2 and a coercive field of 2Ec = 170 kV/cm. Measurements of the fatigue characteristics showed that all the samples exhibited nearly fatigue-free behavior that resisted degradation even after 1 × 1010 cycles.C
Hisashi Oshima,Masafumi Kobune,Hideto Tada,Koji Fukushima,Hideshi Yamaguchi,Koichiro Honda 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.2
The formation mechanism of the perovskite structure, the structural properties, and the ferroelectric properties of bismuth lanthanoid nickel titanate (Bi1−xLnx)(Ni0.5Ti0.5)O3 (BLNT, Ln:La, Nd, or Sm, x = 0 − 0.9) thin films deposited on Pt(100)/MgO(100) substrates by sputtering have been investigated using X-ray diffraction and transmission electron microscopy. The present (Bi1−xLax)(Ni0.5Ti0.5)O3 (BLNT, x ≥0.3), (Bi1−xNdx)(Ni0.5Ti0.5)O3 (BNNT, x 0.4), and (Bi1−xSmx)(Ni0.5Ti0.5)O3 (BSNT, x≥0.6) films were confirmed to have been grown heteroepitaxially and to have had a single-phase perovskite structure. It is shown that of the three, the La-substituted BLNT (x = 0.5) film exhibits the best hysteresis loop shape with a remanent polarization of 12 μC/cm2. The formation mechanism of the perovskite structure, the structural properties, and the ferroelectric properties of bismuth lanthanoid nickel titanate (Bi1−xLnx)(Ni0.5Ti0.5)O3 (BLNT, Ln:La, Nd, or Sm, x = 0 − 0.9) thin films deposited on Pt(100)/MgO(100) substrates by sputtering have been investigated using X-ray diffraction and transmission electron microscopy. The present (Bi1−xLax)(Ni0.5Ti0.5)O3 (BLNT, x ≥0.3), (Bi1−xNdx)(Ni0.5Ti0.5)O3 (BNNT, x 0.4), and (Bi1−xSmx)(Ni0.5Ti0.5)O3 (BSNT, x≥0.6) films were confirmed to have been grown heteroepitaxially and to have had a single-phase perovskite structure. It is shown that of the three, the La-substituted BLNT (x = 0.5) film exhibits the best hysteresis loop shape with a remanent polarization of 12 μC/cm2.