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Robust quantum oscillation of Dirac fermions in a single-defect resonant transistor
Heejun Yang 한국자기학회 2021 한국자기학회 학술연구발표회 논문개요집 Vol.31 No.1
While the massless Dirac fermions produce large energy gaps between Landau levels (LLs), exploiting the quantum Hall effect at room temperature requires large magnetic fields to overcome the energy level broadening by charge inhomogeneities in the device. In this talk, I will demonstrate the robust quantum oscillations of Dirac fermions in a single-defect resonant transistor, which is based on local tunneling between lattice-orientation- aligned graphene layers. A point defect in the h-BN, selected by the orientation-tuned graphene layers, probes local LLs in its proximity at room temperature and low magnetic field (2 Tesla) by minimizing the energy broadening of the LLs by charge inhomogeneity.