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Modelling and optimization of Fenton processes through neural network and genetic algorithm
Hüseyin Cüce,Fulya Aydın Temel,Ozge Cagcag Yolcu 한국화학공학회 2021 Korean Journal of Chemical Engineering Vol.38 No.11
Response surface methodology (RSM), multi-layer perceptron trained by Levenberg-Marquardt (MLPLM); multi-layer perception and Sigma-Pi neural networks trained by particle swarm optimization (PSO) were used to effectively and reliably predict the performance of Classical-Fenton and Photo-Fenton processes. H2O2 doses, Fe(II) doses, and H2O2/Fe(II) rates were determined as independent variables in batch reactors. The performance of models was compared by using RMSE and MAE error criteria. The performance of models was also evaluated in terms of some properties of regression analysis and scatter that showed high linear relationship between the predictions of SPPSO and the actual removal values. As a distinctive aspect of this study, SPNN trained by PSO was used for the first time in the literature in this area and the best predictive results for almost all cases were generated. Moreover, the genetic algorithm (GA) was applied for SP-PSO model results to determine the optimum values of the study. According to the results of GA, under the optimum conditions Photo-Fenton processes had higher performance in each experiment. Thereby, SP-PSO produced satisfactory prediction results without the need for any additional experiments in the case that experimental designs are difficult or costly for wastewater treatment.
Calculation of current.voltage characteristics of a Cu (Ⅱ) complex/n-Si/AuSb Schottky diodeed
K. Akkılıç,Y.S. Ocak,T. Kılıçog˘lu,S. Ilhan,H. Temel 한국물리학회 2010 Current Applied Physics Vol.10 No.1
In this study, Cu (Ⅱ) complex/n-Si structure has been fabricated by forming a thin organic Cu (Ⅱ) complex film on n-Si wafer. It has been seen that the structure has clearly shown the rectifying behaviour and can be evaluated as a Schottky diode. The contact parameters of the diode such as the barrier height and the ideality factor have been calculated using several methods proposed by different authors from current.voltage (I-V) characteristics of the device. The calculated barrier height and ideality factor values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers the deviation from ideal diode characteristics. This deviation can be attributed to the native interfacial layer in the organic/inorganic interface and the high series resistance of the diode. In addition, the energy distribution of the interface state density (Nss) in the semiconductor band gap at Cu (Ⅱ) complex/n-Si interface obtained from I-V characteristics range from 2.15 × 1013 cm-2 eV-1 at (Ec - 0.66) eV to 5.56 × 1012 cm-2 eV-1 at (Ec - 0.84) eV.