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Gaikwad, M.A.,Suryawanshi, M.P.,Nikam, S.S.,Bhosale, C.H.,Kim, J.H.,Moholkar, A.V. Elsevier Sequoia 2016 Journal of photochemistry and photobiology Chemist Vol.329 No.-
<P>Zinc oxide (ZnO) thin films have been deposited with ultrasonic rinsing assisted modified successive ionic layer adsorption and reaction (M-SILAR) method. The effect of Zn concentration on the growth of ZnO films and power conversion efficiency (PCE) of dye-sensitized solar cells (DSSCs) have been studied. The surface morphology changes from nanorods to the nanoflowers like structure as a result of coalescence of the nanorods. Also, the significant effect of the dye adsorption time of photoelectrodes on the overall PCE of ZnO based DSSCs has been investigated systematically. It is found that the chemical stability is the foremost issue for ZnO photoelectrode. The prolonged dye adsorption time is responsible for the deterioration of the ZnO nanostructure due to the formation of Zn2+/N3 dye aggregates. The DSSC prepared using photoelectrode of 0.1 M Zn concentration and dye loading time of 18 h exhibited a highest PCE of 0.70%, since it possesses well-defined 1D nanostructure which facilitates very low reverse saturation current density and longer electron lifetime. (C) 2016 Elsevier B.V. All rights reserved.</P>
Mane, A.A.,Suryawanshi, M.P.,Kim, J.H.,Moholkar, A.V. Academic Press 2017 Journal of Colloid and Interface Science Vol. No.
<P><B>Abstract</B></P> <P>Vanadium pentoxide (V<SUB>2</SUB>O<SUB>5</SUB>) nanorods have been deposited onto the glass substrates by spraying 75ml of 30mM vanadium trichloride (VCl<SUB>3</SUB>) solution at optimized substrate temperature of 400°C. The XRD study confirms the formation of orthorhombic crystal structure of V<SUB>2</SUB>O<SUB>5</SUB> nanorods. The FE-SEM micrograph shows the nanorods-like morphology of V<SUB>2</SUB>O<SUB>5</SUB>. The presence of palladium (Pd) in the Pd-sensitized V<SUB>2</SUB>O<SUB>5</SUB> nanorods is confirmed using EDAX study. The gas sensing measurements show that the Pd-sensitized V<SUB>2</SUB>O<SUB>5</SUB> sensing material is an outstanding candidate for nitrogen dioxide (NO<SUB>2</SUB>) gas detection. Obtained results demonstrate that the Pd-sensitized V<SUB>2</SUB>O<SUB>5</SUB> nanorods show the superior selectivity for NO<SUB>2</SUB> gas in comparison with other gases such as NH<SUB>3</SUB>, H<SUB>2</SUB>S, CO, CO<SUB>2</SUB> and SO<SUB>2</SUB> at an operating temperature of 200°C. It shows the 75% response for 100ppm NO<SUB>2</SUB> gas concentration with response and recovery times of 22s and 126s, respectively. Finally, the gas sensing mechanism based on chemisorption process is proposed to illustrate how Pd nanoparticles affect the gas sensing characteristics (response and response-recovery times).</P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Effect of different annealing environments on the solar cell performance of CdSe pebbles
Pawar, S.A.,Patil, D.S.,Suryawanshi, M.P.,Ghorpade, U.V.,Lokhande, A.C.,Park, J.Y.,Chalapathy, R.B.V.,Shin, J.C.,Patil, P.S.,Kim, J.H. Elsevier Science 2016 Acta materialia Vol.108 No.-
<P>Cadmium selenide pebbles have been synthesized by a simple and cost-effective chemical bath deposition method. In order to study the effect of different annealing environments, the CdSe thin films were annealed in air, nitrogen, argon and in a vacuum at 300 degrees C for 1 h. The optical, structural, compositional, and morphological properties of the films were then analyzed using UV-vis spectrophotometry, photoluminescence, X-ray diffraction, X-ray photoelectron spectroscopy, and field emission scanning electron microscopy. XRD patterns revealed the formation of amorphous CdSe thin films. Annealing entails a change in crystal structure, from amorphous to hexagonal. The chemical composition and valence states of the constituent elements were analyzed by XPS. FESEM images showed the formation of CdSe pebbles in all the samples with voids between the pebbles, but the samples annealed in a vacuum had fewer voids than did other samples. Under AM 1.5G illumination, the photoanodes had an improved power conversion efficiency of 1.44% using an aqueous polysulfide electrolyte with a short-circuit photocurrent density of 11.3 mA cm(-2) when CdSe pebbles were annealed in a vacuum. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.</P>
A Modified Switched-Diode Topology for Cascaded Multilevel Inverters
Raghavendra Reddy Karasani,Vijay B. Borghate,Prafullachandra M. Meshram,H. M. Suryawanshi 전력전자학회 2016 JOURNAL OF POWER ELECTRONICS Vol.16 No.5
In this paper, a single phase modified switched-diode topology for both symmetrical and asymmetrical cascaded multilevel inverters is presented. It consists of a Modified Switched-Diode Unit (MSDU) and a Twin Source Two Switch Unit (TSTSU) to produce distinct positive voltage levels according to the operating modes. An additional H-bridge synthesizes a voltage waveform, where the voltage levels of either polarity have less Total Harmonic Distortion (THD). Higher-level inverters can be built by cascading MSDUs. A comparative analysis is done with other topologies. The proposed topology results in reductions in the number of power switches, losses, installation area, voltage stress and converter cost. The Nearest Level Control (NLC) technique is employed to generate the gating signals for the power switches. To verify the performance of the proposed structure, simulation results are carried out by a PSIM under both steady state and dynamic conditions. Experimental results are presented to validate the simulation results.
A Modified Switched-Diode Topology for Cascaded Multilevel Inverters
Karasani, Raghavendra Reddy,Borghate, Vijay B.,Meshram, Prafullachandra M.,Suryawanshi, H.M. The Korean Institute of Power Electronics 2016 JOURNAL OF POWER ELECTRONICS Vol.16 No.5
In this paper, a single phase modified switched-diode topology for both symmetrical and asymmetrical cascaded multilevel inverters is presented. It consists of a Modified Switched-Diode Unit (MSDU) and a Twin Source Two Switch Unit (TSTSU) to produce distinct positive voltage levels according to the operating modes. An additional H-bridge synthesizes a voltage waveform, where the voltage levels of either polarity have less Total Harmonic Distortion (THD). Higher-level inverters can be built by cascading MSDUs. A comparative analysis is done with other topologies. The proposed topology results in reductions in the number of power switches, losses, installation area, voltage stress and converter cost. The Nearest Level Control (NLC) technique is employed to generate the gating signals for the power switches. To verify the performance of the proposed structure, simulation results are carried out by a PSIM under both steady state and dynamic conditions. Experimental results are presented to validate the simulation results.
Agawane, G. L.,Shin, S. W.,Vanalakar, S. A.,Suryawanshi, M. P.,Moholkar, A. V.,Yun, J. H.,Gwak, J.,Kim, J. H. Springer Science + Business Media 2015 Journal of materials science Materials in electron Vol.26 No.3
<P>This study reports the preparation and characterization of CuZnSnS4 (CZTS) thin films by a non-toxic sol-gel technique. The CZTS thin films were prepared on Molybdenum substrates and annealed in various atmospheres viz. N-2 gas, Sulphur (S) powder and H2S gas. The effects of various annealing atmospheres on the morphological, structural, compositional and optical properties of the CZTS thin films were investigated. The field emission scanning electron microscopy studies on the as-deposited CZTS thin film showed that the film consisted nanocrystalline CZTS grains while all the annealed films were highly compact, uniform, and that the thickness varied from 1,884 to 832 nm. The X-ray diffraction and Raman studies on the CZTS thin films showed formation of the kesterite structure without any secondary phases. All the CZTS thin films were nearly stoichiometric with slightly Zn rich composition which is favorable for a high photovoltaic performance of solar cells. Photoluminescence (PL) spectroscopy study on all the CZTS thin films showed an asymmetric broad band emission. The direct band gap energy of the CZTS thin films was found to be between 1.3 and 1.6 eV, as confirmed by PL study. The S powder-annealed CZTS thin film was further used for the fabrication of a solar cell of structure SLG/Mo/CZTS/CdS/i-ZnO/AZO/Al grid. The best solar cell showed a short-circuit current density of 7.19 mA/cm(2), open-circuit voltage of 270 mV, fill factor of 39 % and power conversion efficiency of 0.77 % under air mass 1.5 (100 mW/cm(2)) illumination.</P>
Suryawanshi, M.P.,Shin, S.W.,Ghorpade, U.V.,Gurav, K.V.,Agawane, G.L.,Hong, C.W.,Yun, J.H.,Patil, P.S.,Kim, J.H.,Moholkar, A.V. Association for Applied Solar Energy ; Elsevier Sc 2014 SOLAR ENERGY -PHOENIX ARIZONA THEN NEW YORK- Vol.110 No.-
A cost-effective chemical approach is developed for the synthesis of photoelectrochemically active Cu<SUB>2</SUB>ZnSnS<SUB>4</SUB> (CZTS) thin films. More specifically, CZTS precursor thin films are prepared by the sequential deposition of Cu<SUB>2</SUB>SnS<SUB>3</SUB> and ZnS layers using a successive ionic adsorption and reaction (SILAR) technique. The CZTS precursor thin films are sulfurized at different temperatures ranging from 500 to 575<SUP>o</SUP>C at intervals of 25<SUP>o</SUP>C. The influence of different sulfurization temperatures on the structural, compositional, morphological, and optical properties, as well as on the photoelectrochemical performance is studied. The films sulfurized at 575<SUP>o</SUP>C showed a prominent kesterite phase with a nearly stoichiometric composition, dense microstructure with the desired thickness, and an optical band gap energy of 1.47eV. The photoelectrochemical (PEC) cell fabricated using CZTS thin film sulfurized at 575<SUP>o</SUP>C showed the highest short circuit current density (J<SUB>sc</SUB>) of 8.27mA/cm<SUP>2</SUP> with a power conversion efficiency (η) of 1.06%.
Nikam, S. S.,Suryawanshi, M. P.,Gaikwad, M. A.,Kim, J. H.,Moholkar, A. V. Springer Science + Business Media 2017 Journal of materials science. Materials in electro Vol.28 No.7
<P>Polyvinyl alcohol is used as a surfactant in the chemical bath deposition of PbS thin films, which causes compact, pinhole free and uniform PbS thin films. Influence of deposition time on the structural, optical, morphological, compositional, electro-chemical and photo-electrochemical (PEC) properties of the PbS thin films are studied. The charge transfer resistance is analysed using electrochemical impedance spectroscopy. The best PEC device fabricated using optimized deposition time (3 h) showed short circuit current density (J(sc)) of 1.68 mA. After annealing the optimised P-63 sample at 75 A degrees C for 1.5 h the composition changed from Pb rich to near stoichiometric. For typical PA sample J(sc) improves to 2.13 mA and photo conversion efficiency advances from 0.045 to 0.072%.</P>
Room temperature chemical synthesis of Cu(OH)<sub>2</sub> thin films for supercapacitor application
Gurav, K.V.,Patil, U.M.,Shin, S.W.,Agawane, G.L.,Suryawanshi, M.P.,Pawar, S.M.,Patil, P.S.,Lokhande, C.D.,Kim, J.H. Elsevier Sequoia 2013 Journal of alloys and compounds Vol.573 No.-
Room temperature soft chemical synthesis route is used to grow nanograined copper hydroxide [Cu(OH)<SUB>2</SUB>] thin films on glass and stainless steel substrates. The structural, morphological, optical and wettability properties of Cu(OH)<SUB>2</SUB> thin films are studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV-vis spectrophotometer and water contact angle measurement techniques. The results showed that, room temperature chemical synthesis route allows to form the nanograined and hydrophilic Cu(OH)<SUB>2</SUB> thin films with optical band gap energy of 3.0eV. The electrochemical properties of Cu(OH)<SUB>2</SUB> thin films are studied in an aqueous 1M NaOH electrolyte using cyclic voltammetry. The sample exhibited supercapacitive behavior with 120F/g specific capacitance.