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RISS 인기검색어
- 검색키워드
- 저자 : Gu Minseon (검색결과 5 건)
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Contact holes in vertical electrode structures analyzed by voltage contrast-SEM and conducting AFM
Gu Minseon,Hyun Moon Seop,Han Moonsup,Kim Gyungtae,Chang Young Jun 한국물리학회 2023 Current Applied Physics Vol.53 No.-
Soaring demands of multi-stacked memory devices request urgent development of backside contact electrode technologies, such as high aspect ratio etching, metallization, and inspection methods. Especially the complex metal contact process should be monitored for each manufacturing step to filter the defective samples and to maintain the high yield of production. Among the inspection methods for detecting the electrical connections, there is voltage contrast (VC)-SEM and conducting AFM (C-AFM). In this report, we investigated the two inspection methods for testing designed samples with different contact hole states. The VC-SEM data shows the contrast variation at the contact holes, from which one may discern the contact status with an optimum voltage. The C-AFM results clearly demonstrate a finite electrical current in the connected contact, while a negligible current in the disconnected one. Finally, we discuss insights of using the two methods for analyzing the contact hole technologies with high aspect ratios.
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Joo, Beom Soo,Jang, Seunghun,Gu, Minseon,Jung, Namsik,Han, Moonsup ELSEVIER SCIENCE 2019 Journal of Alloys and Compounds Vol.801 No.-
<P><B>Abstract</B></P> <P>Impurity doping is a key factor that needs to be addressed to control the optical properties of silicon quantum dots (Si QDs) for their applications in optoelectronic devices. Although there have been several studies to understand the effect on n-type and p-type dopant on the luminescence properties of Si QDs, the exact influence of the dopant impurities on the optical properties and the underlying mechanism are yet to be understood. For this purpose, we investigate the luminescence properties of Si QDs/SiO<SUB>2</SUB> multilayer structure doped with B and P. Using rf-magnetron sputtering and ion implantation techniques, we prepared three kinds of samples: undoped, B-doped and <I>P</I>-doped. Results from photoluminescence measurements indicate that the significant luminescence suppression in the doped samples can be mainly attributed to the Auger non-radiative process occurring between photoexcited excitons and free carriers. Our interpretation should serve to resolve the controversy around the effect of impurity doping on the luminescence properties of Si QDs.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Fabricating the silicon quantum dots embedded in SiO<SUB>2</SUB> by rf-magnetron sputtering. </LI> <LI> Boron and phosphorus doping to the silicon quantum dot by ion implantation methods. </LI> <LI> Observing the significant luminescence suppression in doped silicon quantum dots. </LI> <LI> The luminescence quenching in doped Si QDs is attributed to the non-radiative Auger process of excess free carriers. </LI> </UL> </P>
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Ko, Seunghwan,Lee, Junsu,Koo, Joonhoi,Joo, Beom Soo,Gu, Minseon,Lee, Ju Han IEEE 2016 Journal of Lightwave Technology Vol.34 No.16
<P>We propose a chemical wet etching technique that does not make use of toxic Hydrofluoric solution to produce cladding-etched optical fiber intended for use as a platform for a fiberized saturable absorber. The wet etching technique is based on the use of a mixed solution of NH4F and (NH4)(2)SO4, which is not toxic, and a small, specially-devised etching cradle to achieve precise control of the etched fiber length. A fiberized saturable absorber was implemented by depositing the graphene oxide particles on top of the residual cladding for our cladding-etched fiber by using the drop & dry method. The saturable absorber was incorporated into an erbium-doped fiber ring cavity to test its suitability as a mode-locker with a modulation depth larger than 4.3%. Femtosecond pulses with a temporal width of similar to 615 fs were readily obtained at a repetition rate of similar to 17.09 MHz. The saturable absorption and laser performance of our saturable absorber were compared to those of an absorber on a core-etched fiber platform prepared through the formation of microdroplets of HF and surface tension-driven flow, as in [57].</P>
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Electrical conductivity enhancement of epitaxially grown TiN thin films
Khim Yeong Gwang,Park Beomjin,Heo Jin Eun,Khim Young Hun,Khim Young Rok,Gu Minseon,Rhee Tae Gyu,Chang Seo Hyoung,Han Moonsup,Chang Young Jun 한국물리학회 2023 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.82 No.5
Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin flms on MgO (111), sapphire (001), and mica substrates at 640℃ and room temperature by using a DC sputtering, respectively. The epitaxial flms show less amount of surface oxidation than the polycrystalline ones grown at room temperature. The epitaxial flms show drastically reduced resistivity (~ 30 micro-ohm-cm), much smaller than the polycrystalline flms. Temperature-dependent resistivity measurements show a nearly monotonic temperature slope down to low temperature. These results demonstrate that high-temperature growth of TiN thin flms leads to signifcant enhancement of electrical conductivity, promising for durable and scalable electrode applications.
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Kim, Gee Yeong,Jo, William,Lee, Kee Doo,Choi, Hee-Su,Kim, Jin Young,Shin, Hae-Young,Nguyen, Trang Thi Thu,Yoon, Seokhyun,Joo, Beom Soo,Gu, Minseon,Han, Moonsup Elsevier 2015 Solar energy materials and solar cells Vol.139 No.-
<P><B>Abstract</B></P> <P>Cu<SUB>2</SUB>ZnSnS<SUB>4</SUB> (CZTS) films were grown by electrochemical deposition, and we measured the work function of the as-grown and of the KCN-etched CZTS surfaces by using Kelvin probe force microscopy (KPFM) and micro-Raman scattering spectroscopy with incident laser wavelengths of 488.0 and 632.8nm, respectively, and the results indicate that a secondary phase formed at different depths. The KPFM measurements can discriminate phase uniformity at the nano-scale. Secondary phases, such as Cu<SUB>2−<I>x</I> </SUB>S (0<<I>x</I><1), ZnS, and MoS<SUB>2</SUB>, were identified on the as-grown surface while Cu<SUB>2−<I>x</I> </SUB>S was removed from the KCN-etched surface. The KCN-etched CZTS absorption layer was measured to have a 5.0% conversion efficiency. Owing to the low cost of electrochemical deposition, it is desirable to obtain high tailored CZTS films can be obtained with the robust surface characteristics of a uniform work function with a single phase.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Effects of KCN etching on surface properties of CZTS. </LI> <LI> Phase identification by Raman scattering spectroscopy and Kelvin probe force microscopy. </LI> <LI> Secondary phases on CZTS and their work function values. </LI> <LI> Etching of Cu<SUB>2−<I>x</I> </SUB>S by KCN and its resultant change on the morphology and potential. </LI> <LI> Improved surface, eventually interface in the PN junction, enhancing the efficiency. </LI> </UL> </P>
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