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Case Study on Tunnel Settlement Calculations during Construction Considering Shield Disturbance
Fuxue Sun,Zhouzhou Jin,Chaoliang Wang,Changfei Gou,Xiaochun Li,Cheng Liu,Zheng Yu 대한토목학회 2023 KSCE Journal of Civil Engineering Vol.27 No.5
Shield construction in structural soft soils inevitably disturbs the soil around the tunnel leading to tunnel settlement instead of tunnel uplift due to soil unloading rebound during construction. In this paper, tunnel settlement prediction in structural soft soils during construction has been studied by adopting Oujiang Beikou shield tunnel as an example. Firstly, disturbance degree calculation method based on effective stress was introduced and the disturbance degree due to shield construction was numerically simulated. Secondly, combined with one-dimensional consolidation test results, a “two-fold line” settlement calculation model was developed for disturbed soil. Finally, tunnel settlement during construction was predicted through one-way compression layer-summation method and compared with experimentally measured results. Research results demonstrated that the developed method was suitable for the prediction of shield tunnel settlement in structural soft soils.
Study of A MEMS Gyroscope Sensing Unit Simulate and Process
Yu Liu,Baisheng Sun,Ping Yue,Qinwen Yan,Fuxue Zhang 제어로봇시스템학회 2010 제어로봇시스템학회 국제학술대회 논문집 Vol.2010 No.10
This paper reports a MEMS gyroscope that is driven by the rotating carrier’s angular velocity. The structure and fabrication are introduced in the paper. The silicon processing and simulating of the sensing unit are studied. We use coventor ware to simulate structure. And in process, we use spray coating instead of spinning coating. In simulation, the first modal frequency we obtained is 220.38Hz, it is nearly we calculated. A conformal resist of 3μm thickness is obtained at 35mm Z-height, 100mm/min travel rate, 3ml/min flow rate. In step surface coating it gets more uniform thickness that associates with line width, a better line width would get a more precise pattern. Thus, it provides an opportunity of a precision patterning on a wafer.